Electric double layer thin film transistor with vertical channel structure and preparation method thereof

Abstract

The invention discloses an electric double layer thin film transistor with a vertical channel structure and a preparation method thereof. The thin film transistor consists sequentially from bottom totop of a substrate, a gate electrode layer, an electrolyte gate dielectric layer, a source electrode layer, a semiconductor channel layer and a drain electrode. The source electrode layer is disposedabove the electrolyte gate dielectric layer. The semiconductor channel layer is disposed above the source electrode layer. The drain electrode is disposed above the semiconductor channel layer. The source electrode layer is a conductive film with an ultra-thin porous structure. The electrolyte gate dielectric layer is made of an electrolyte material having an electric double layer effect. By adopting the vertical channel structure, the thin film transistor of the invention effectively reduces the channel length, thereby increasing the drain electrode current and reducing the operating voltage.According to the invention, the driving capability of the thin film transistor can be effectively enhanced, reduce the power consumption, and the advantages of simple process, low cost, easy integration and the like are gained, and the application in the field of flexible, portable, mobile and wearable low power electronic systems and TFT integrated sensors is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an electric double-layer thin film transistor with a vertical channel structure and a preparation method thereof. Background technique [0002] In recent years, the application of thin film transistor (TFT) in random access memory (RAM), flat panel imaging, too integrated sensor, especially in display field as AMLCD and AMOLED has attracted extensive attention and research. Over the years, the active layer semiconductor materials used in TFTs have undergone a transformation from silicon-based to oxides, and even to organics, and the performance of various TFTs has also been continuously improved. [0003] In recent years, oxide TFTs represented by zinc oxide are most likely to become the best substitutes for widely used silicon-based TFTs due to their relatively high mobility, high transparency, low-temperature process and many other advantages. For many appli...

AI Technical Summary

Problems solved by technology

However, most of the common vertical channel structure TFT adopts side gate structure, which requires multiple photolithography and masking, complex process and high cost of industrialization, which is not conducive to its wide application in low-end electronic systems

In addition, traditional TFT devices usually use an oxide insulating film as the gate dielectric layer, the driving voltage is relatively high, and the power consumption of the device is large, which limits its application potential in the fields of flexible, portable, mobile and other electronic systems

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