Method of manufacturing ZnO strip waveguide by carbon ion beam irradiation
A carbon ion beam, strip waveguide technology, applied in the direction of optical waveguide light guide, etc., can solve the problems of difficult optical waveguide structure and so on
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Embodiment 1
[0015] Fabrication of ZnO Ridge Optical Waveguide
[0016] Preparation of planar waveguide: cut ZnO crystal (1) z-cut, size 5 mm×10 mm, thickness 0.5 mm, surface and end face optically polished. The ZnO crystal is cleaned with acetone, ethanol and deionized water; the prepared sample is placed in the accelerator target chamber, irradiated, the beam current is 55 nanoamperes, the energy is 4.5 MeV, and the dose is 2×10 15 ion / carbon ion per square centimeter (2), a barrier layer (3) with reduced refractive index is formed at the end of the ion beam under the crystal surface, and a planar waveguide (4) is formed between the layer and the air.
[0017] Preparation of surface mask: apply photoresist (5) on the polished surface of ZnO crystal with a high-speed coater, rotate at 3500 rpm, and bake at 80 degrees Celsius for 20 minutes. The photoresist is BP218 UV positive resist. Expose the photoresist with a photoresist plate, the photoresist plate is a 50mm×10mm chrome plate, the ...
Embodiment 2
[0021] Fabrication of ZnO Channel-Shaped Optical Waveguide
[0022] Sample polishing: cut ZnO crystal (1) z-cut, size 5 mm × 10 mm, thickness 0.5 mm, surface and end faces optically polished. After cleaning the ZnO crystals with acetone, ethanol, and deionized water, prepare the mask.
[0023] Preparation of surface mask: apply photoresist (5) on the polished surface of ZnO crystal with a high-speed coater, rotate at 3500 rpm, and bake at 80 degrees Celsius for 20 minutes. The photoresist is BP218 UV positive resist. Expose the photoresist with a photoresist plate, the photoresist plate is a 50mm×10mm chrome plate, the line shading part is 5mm, the non-shielding part is 45mm, and the stripe period is 50 microns. After exposure, develop with a special developing solution and rinse with deionized water to form a photoresist mask. The stencil produced after photolithography is heated to 160 degrees Celsius for 20 minutes under the protection of nitrogen. During this process, th...
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