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Preparation method of room temperature ferromagnetic hydrogen and hafnium co-doped indium oxide film

A room temperature ferromagnetic and co-doping technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of good uniformity, easy control of the preparation process, and dense film grains

Active Publication Date: 2019-10-29
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there has been no relevant report on the preparation of room temperature ferromagnetic hydrogen hafnium co-doped indium oxide films by DC magnetron sputtering

Method used

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  • Preparation method of room temperature ferromagnetic hydrogen and hafnium co-doped indium oxide film
  • Preparation method of room temperature ferromagnetic hydrogen and hafnium co-doped indium oxide film
  • Preparation method of room temperature ferromagnetic hydrogen and hafnium co-doped indium oxide film

Examples

Experimental program
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Embodiment 1

[0019] Put the monocrystalline silicon substrate into deionized water, add detergent containing sodium alkylbenzene sulfonate, bathe in water at 80°C for more than 1 hour, wait until the temperature is lower than 40°C, ultrasonicate for more than 15 minutes, and then rinse with deionized water until If there is no foam, add appropriate amount of alcohol, ultrasonic for more than 15 minutes, then rinse with deionized water for more than 5 times, add appropriate amount of deionized water, and ultrasonic for more than 15 minutes.

[0020] Put the cleaned substrate into the chamber of the DC magnetron sputtering device, and evacuate to less than 10 -3 Pa, the heating substrate temperature is 250°C, the holding time is more than 30min, Ar gas is introduced, the argon partial pressure is 1.2Pa, hydrogen gas is introduced, the hydrogen partial pressure is 0.08Pa, and the sputtering power density is 5W / cm 2 , prepare the IHFO film, wait for the substrate temperature to cool down to ro...

Embodiment 2

[0023] Put the monocrystalline silicon substrate into deionized water, add detergent containing sodium alkylbenzene sulfonate, bathe in water at 80°C for more than 1 hour, wait until the temperature is lower than 40°C, ultrasonicate for more than 15 minutes, and then rinse with deionized water until If there is no foam, add appropriate amount of alcohol, ultrasonic for more than 15 minutes, then rinse with deionized water for more than 5 times, add appropriate amount of deionized water, and ultrasonic for more than 15 minutes.

[0024] Put the cleaned substrate into the chamber of the DC magnetron sputtering device, and evacuate to less than 10 -3 Pa, the heating substrate temperature is 500°C, the holding time is more than 30min, Ar gas is introduced, the partial pressure is 1.9Pa, hydrogen gas is introduced, the partial pressure is 0.125Pa, and the sputtering power density is 1.5W / cm 2 , prepare the IHFO film, wait for the substrate temperature to cool down to room temperatu...

Embodiment 3

[0027] Put the monocrystalline silicon substrate into deionized water, add detergent containing sodium alkylbenzene sulfonate, bathe in water at 80°C for more than 1 hour, wait until the temperature is lower than 40°C, ultrasonicate for more than 15 minutes, and then rinse with deionized water until If there is no foam, add appropriate amount of alcohol, ultrasonic for more than 15 minutes, then rinse with deionized water for more than 5 times, add appropriate amount of deionized water, and ultrasonic for more than 15 minutes again.

[0028] Put the cleaned substrate into the chamber of the DC magnetron sputtering device, and evacuate until the vacuum degree is lower than 10 -3 Pa, the substrate temperature is 160°C, Ar gas is fed, argon partial pressure is 0.4Pa, hydrogen gas is fed, hydrogen partial pressure is 2.5×10 -2 Pa, sputtering power density is 3W / cm 2 , prepare the IHFO film, wait for the substrate temperature to cool down to room temperature naturally, and take ou...

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PUM

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Abstract

Provided is a preparation method of hydrogen and hafnium co-doped indium oxide film having room-temperature ferromagnetism. A direct-current magnetron sputtering method is adopted. An In2O3 ceramic target accounting for 1.5-10% of the doping amount of hafnium oxide (HfO2) by weight is used as a target material, monocrystalline silicon serves as a substrate, high-purity argon (Ar) having the purityof 99.99% or above serves as sputtering gas, hydrogen (H2) is introduced in the sputtering process to serve as doping source for deposition, and the hydrogen and hafnium co-doped indium oxide film having different magnetization characteristics is obtained.

Description

technical field [0001] The invention relates to a method for preparing a ferromagnetic thin film at room temperature by DC magnetron sputtering, in particular to a method for regulating the magnetization characteristics of the thin film by hydrogen doping amount. Background technique [0002] Diluted magnetic semiconductors, which combine the charge transport properties of semiconductors and the information storage properties of magnetic materials, have attracted extensive research interest for their applications in spintronic devices. Based on the theory of Dietl et al. [T.Dietl et al., Phys.Rev.B, 63, 195205 (2001)], the room temperature ferromagnetism of wide bandgap semiconductor materials is predicted, and transition metal elements are doped with oxides such as zinc oxide, titanium dioxide and indium oxide. Diluted magnetic semiconductor materials have attracted considerable attention. At present, molybdenum [C.Y.Park et al, Appl. Peleckis et al., Appl.Phys.Lett., 89,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02172H01L21/02266
Inventor 王光红王文静赵雷莫丽玢刁宏伟
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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