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n+-Si/i-Ge/p+-Ge structure PIN photodetector and preparation method thereof

A photodetector, N-type technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problem of increasing the surface roughness of the Ge/Si buffer layer and reducing the screw dislocation density of the Ge epitaxial layer. Ge epitaxial layer screw dislocation and other problems, to achieve the effect of reducing dislocation density and surface roughness, short process cycle, and low thermal budget

Inactive Publication Date: 2018-03-09
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the two-step growth method still cannot solve the occurrence of a large number of screw dislocations in the Ge epitaxial layer, so it is often necessary to combine the cyclic annealing process to reduce the screw dislocation density of the Ge epitaxial layer
However, the cyclic annealing process will cause Si-Ge inter-diffusion problems
In addition, the introduction of the cyclic annealing process will lead to an increase in the surface roughness of the Ge / Si buffer layer while reducing the dislocation density.
At the same time, this method also has the disadvantages of long process cycle and high thermal budget.

Method used

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  • n+-Si/i-Ge/p+-Ge structure PIN photodetector and preparation method thereof
  • n+-Si/i-Ge/p+-Ge structure PIN photodetector and preparation method thereof
  • n+-Si/i-Ge/p+-Ge structure PIN photodetector and preparation method thereof

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Embodiment 1

[0048] See figure 1 , figure 1 A kind of n provided for the embodiment of the present invention + -Si / i-Ge / p + -Schematic diagram of the fabrication method of the Ge-structured PIN photodetector. The method comprises the steps of:

[0049] Step a, select Si substrate;

[0050] Step b, growing a Ge seed layer on the surface of the Si substrate under the first temperature range;

[0051] Step c, growing a Ge host layer on the surface of the Ge seed layer under a second temperature range;

[0052] Step d, growing a second Si layer on the surface of the Ge host layer;

[0053] Step e, heating the entire substrate material including the single crystal Si substrate, the first Ge seed layer, and the second Ge host layer to 700°C, and continuously adopting a laser process to crystallize the entire substrate Materials, where the laser wavelength is 808nm, the laser spot size is 10mm×1mm, and the laser power is 1.5kW / cm 2 , the laser moving speed is 25mm / s to form a crystallized...

Embodiment 2

[0077] See Figure 4a-Figure 4i , Figure 4a-Figure 4i A kind of n provided for the embodiment of the present invention + -Si / i-Ge / p + -Schematic diagram of the process structure of the Ge structure PIN photodetector preparation method. This embodiment describes the technical solution of the present invention in detail on the basis of the above embodiments. Specifically, the method may include:

[0078] S101. Substrate selection. Such as Figure 4a As shown, the selected doping concentration is 5×10 18 cm -3 The P-type single crystal silicon (Si) substrate sheet (001) 100 is the initial material;

[0079] S102, Ge epitaxial layer growth.

[0080] S1021, such as Figure 4b As shown, the first epitaxial layer is grown. growing a 40-50 nm Ge seed layer 102 on the single crystal Si substrate by using a CVD process at a temperature of 275° C. to 325° C.;

[0081] S1022, growing the second Ge epitaxial layer. Such as image 3 As shown in c, at a temperature of 500° C. ...

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Abstract

The invention relates to an n+-Si / i-Ge / p+-Ge structure PIN photodetector and a preparation method thereof. The method comprises the steps that a P-type Si substrate is selected; a Ge seed layer grows;a Ge host layer grows; a Si layer grows; the entire substrate material is heated to 700 DEG C, and is continuously crystallized by a laser process; the laser wavelength is 808nm; the spot size is 10mm*1mm; the power is 1.5kW / cm<2>; the moving speed is 25mm / s; a crystallized Ge layer is formed; a SiO2 protective layer is deposited; ion implantation is carried out on the Si layer to form an N-typedoped region; and an Al material is deposited on the surface of the substrate to form a Ge PIN photodetector. According to the invention, the laser crystallization process has the advantages of high selectivity, accurate control precision, high crystallization speed, simple process step, short process cycle, low thermal budget and the like; continuous laser assists to crystallize the Ge / Si dummy substrate, which can effectively reduce dislocation density and surface roughness; and the Si layer is used as the protective layer of the laser-crystallized Ge layer, and is used as the N-region of the Ge PIN photodetector after phosphonium ion implantation of the Si layer, which simplifies the process steps.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a n + -Si / i-Ge / p + -Ge structure PIN photodetector and preparation method thereof. Background technique [0002] Semiconductor photodetectors are one of the key devices in communication systems, and their function is to convert optical signals into electrical signals. High-speed optical fiber communication systems require semiconductor photodetectors to have a higher rate, and the development trend of integration requires semiconductor photodetectors to be integrated with other optoelectronic devices. Therefore, the study of high-performance photodetectors is of great significance. With the existing technology, Si-based optoelectronic integrated receiving chip has always been the goal pursued by people. Detectors made of III-V semiconductor materials such as InGaAs / InP have high quantum efficiency and low dark current and have entered the stage of industrializatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/18H01L21/02H01L21/268
CPCH01L21/02675H01L21/268H01L31/105H01L31/1876Y02P70/50
Inventor 张洁宋建军包文涛
Owner XIDIAN UNIV