A kind of LED epitaxial growth method
A technology of epitaxial growth and growth pressure, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of contaminated substrates, contaminated substrate materials, expensive prices, etc., to reduce contact resistance, reduce operating voltage, and increase probability Effect
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Embodiment 1
[0047] In Example 1 of the present invention, VEECO MOCVD is used to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 , high purity N 2 Alternatively, high purity H 2 and high purity N 2 The mixed gas, as a carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) and the metal-organic source triethylgallium (TEGa) are the gallium source, trimethylindium (TMIn) is the indium source, and trimethylaluminum (TMAl) is the aluminum source , dimethyl zinc (DMZn) as zinc source, N-type dopant as silane (SiH 4 ), the P-type dopant is magnesocene (CP2Mg), the substrate is sapphire, and the reaction pressure is between 100Torr-1000Torr.
[0048] figure 1 It is a method for LED epitaxial growth in Embodiment 1 of the present invention, such as figure 1 As shown, the present invention provides a method for LED epitaxial growth, comprising:
[0049] S101: Treating the substrate; S102: Growing a low-temperature GaN nucl...
Embodiment 2
[0057] In Example 2 of the present invention, VEECO MOCVD is used to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 , high purity N 2 Alternatively, high purity H 2 and high purity N 2 The mixed gas, as a carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) and the metal-organic source triethylgallium (TEGa) are the gallium source, trimethylindium (TMIn) is the indium source, and trimethylaluminum (TMAl) is the aluminum source , dimethyl zinc (DMZn) as zinc source, N-type dopant as silane (SiH 4 ), the P-type dopant is magnesocene (CP2Mg), the substrate is (0001) plane sapphire, and the reaction pressure is between 100torr and 1000torr.
[0058] image 3 It is a method for LED epitaxial growth in Embodiment 3 of the present invention, such as image 3 As shown, the present invention provides a method for LED epitaxial growth, comprising:
[0059] S201: processing the substrate;
[0060] In some opt...
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