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A p-type ldmos structure with charge-tunable field plate

A field plate and shape-tuning technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as unsatisfactory surface electric field distribution

Active Publication Date: 2020-11-10
UNIV OF JINAN
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Field plate technology is an effective and important technology to optimize the surface electric field of LDMOS devices, but the uneven charge distribution on the traditional field plate makes the surface electric field distribution of the device unsatisfactory, so the traditional field plate technology design method needs further improvement

Method used

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  • A p-type ldmos structure with charge-tunable field plate

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Embodiment Construction

[0017] refer to figure 1 , a P-type LDMOS structure with an adjustable charge field plate, comprising: an N-type semiconductor substrate 1, a P-type drift region 2 and an N-type well 3 are arranged on the N-type semiconductor substrate 1, and the N-type A P-type source region 4 and an N-type contact region 5 are arranged on the well 3, a P-type drain region 6 and a field oxide layer 7 are arranged on the P-type drift region 2, and a part of the P-type drift region 2 and a part of the N-type well 3 A gate oxide layer 8 is provided above, and one end of the gate oxide layer 8 is against the boundary of the P-type source region 4, and the other end of the gate oxide layer 8 is against the boundary of the field oxide layer 7. On the surface of the gate oxide layer 8, a Polysilicon gate 9, and polysilicon gate 9 extends to the top of field oxide layer 7, in part of N-type well 3, N-type contact region 5, P-type source region 4, polysilicon gate 9, P-type drain region 6 and part of ...

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Abstract

The invention discloses a P-type LDMOS structure with an adjustable charge field plate, comprising: an N-type semiconductor substrate, on which a P-type drift region and an N-type well are arranged, and on the N-type well A P-type source region, an N-type contact region and a gate oxide layer are provided, and a P-type drain region and a field oxide layer are provided on the P-type drift region, and it is characterized in that the surface of the field oxide layer is provided with a plurality of charge-adjustable type field plates, each charge adjustable field plate is connected with a metal sensing layer, and the N-type contact region and the P-type source region are connected with a source metal, and the source metal completely covers all the metal sensing layers. This structure can obtain a uniform surface lateral electric field distribution in the entire drift region of the device, has a high lateral withstand voltage capability, and can increase the doping concentration of the drift region of the device while maintaining a high breakdown voltage, thereby obtaining low conduction resistance.

Description

technical field [0001] The present invention relates to the field of power semiconductor devices, more specifically, it relates to a P-type LDMOS (Lateral Double Diffused Metal Oxide Semiconductor Field Effect Transistor) suitable for high-voltage applications, which is suitable for high-voltage applications such as printers, motors, and flat panel displays. Driver chips in the low current field. Background technique [0002] LDMOS (Lateral Double Diffused Metal Oxide Semiconductor Transistor) is a lateral high voltage device of DMOS (Double Diffused Metal Oxide Semiconductor Transistor device). It has the advantages of high withstand voltage, large gain, low distortion, etc., and is more compatible with CMOS technology, so it is widely used in intelligent power integrated circuits. P-type LDMOS can greatly simplify circuit design, so it has received extensive attention and research. At present, the focus of P-type LDMOS design is how to reasonably alleviate the contradict...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/40H01L29/78
CPCH01L29/0611H01L29/404H01L29/7816
Inventor 张春伟付小倩李阳王靖博岳文静李志明李威
Owner UNIV OF JINAN