Preparation method, product and application of tungsten oxide electron transfer layer
A technology of electron transport layer and tungsten oxide, which is applied in the direction of final product manufacturing, circuit, photovoltaic power generation, etc., can solve the problems of few reports, achieve the effect of wide adjustable range of parameters, simple process and process, and strong repeatability
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[0032] Example 1
[0033] (1) Measure 5ml n-propanol solution, weigh 0.5g tungsten hexachloride, dissolve tungsten hexachloride in n-propanol to obtain a solubility of 0.1g / ml, stir until completely dissolved to obtain a yellow solution ;
[0034] (2) Continue to stir, the yellow solution becomes a transparent light blue solution;
[0035] (3) Spin coating 30s on the cleaned FTO conductive glass at a speed of 3000 rpm;
[0036] (4) The spin-coated substrate is heated in an oven at 150 degrees Celsius for 15 minutes;
[0037] (5) In order to obtain better film quality, repeat the steps (3) and (4) above three times to obtain a stable performance tungsten oxide electron transport layer material;
[0038] The crystal form of the tungsten oxide film obtained by the above preparation method is consistent with the standard powder diffraction card (JCPDS: 36-1451). On the basis of the prepared electron transport layer, the perovskite layer and the hole transport layer Spiro-OMeTAD were spin-c...
Example Embodiment
[0039] Example 2
[0040] (1) Measure 5ml of isopropanol solution, weigh 0.25g of tungsten hexachloride, dissolve tungsten hexachloride in isopropanol to obtain a solubility of 0.05g / ml, stir until completely dissolved to obtain a yellow solution ;
[0041] (2) Continue to stir, the yellow solution turns into a transparent light blue solution;
[0042] (3) Spin coating on the cleaned FTO conductive glass at a speed of 2500rmp for 40s;
[0043] (4) The spin-coated substrate is heated in an oven at 150 degrees Celsius for 25 minutes;
[0044] (5) In order to obtain better film quality, repeat the steps (3) and (4) above three times to obtain a stable performance tungsten oxide electron transport layer material;
[0045] The crystal form of the tungsten oxide film obtained by the above preparation method is consistent with the standard powder diffraction card (JCPDS: 36-1451). On the basis of the prepared electron transport layer, the perovskite layer and the hole transport layer Spiro-OM...
Example Embodiment
[0047] Example 3
[0048] (1) Measure 5ml of n-butanol solution, weigh 0.5g of tungsten hexachloride, dissolve tungsten hexachloride in n-butanol to obtain a solubility of 0.1g / ml, stir until completely dissolved to obtain a yellow solution ;
[0049] (2) Continue to stir, the yellow solution becomes a transparent light blue solution;
[0050] (3) Spin coating on the cleaned FTO conductive glass at a speed of 3500rmp for 30s;
[0051] (4) The spin-coated substrate is heated in an oven at 150 degrees Celsius for 20 minutes;
[0052] (5) In order to obtain better film quality, repeat the above steps (3) and (4) three times to obtain a stable performance tungsten oxide electron transport layer material;
[0053] The crystal form of the tungsten oxide film obtained by the above preparation method is consistent with the standard powder diffraction card (JCPDS: 36-1451). On the basis of the prepared electron transport layer, the perovskite layer and the hole transport layer Spiro-OMeTAD were...
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