Preparation method, product and application of tungsten oxide electron transfer layer

A technology of electron transport layer and tungsten oxide, which is applied in the direction of final product manufacturing, circuit, photovoltaic power generation, etc., can solve the problems of few reports, achieve the effect of wide adjustable range of parameters, simple process and process, and strong repeatability

Inactive Publication Date: 2018-04-06
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] There are few reports on the preparation method of using

Method used

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  • Preparation method, product and application of tungsten oxide electron transfer layer
  • Preparation method, product and application of tungsten oxide electron transfer layer
  • Preparation method, product and application of tungsten oxide electron transfer layer

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0032] Example 1

[0033] (1) Measure 5ml n-propanol solution, weigh 0.5g tungsten hexachloride, dissolve tungsten hexachloride in n-propanol to obtain a solubility of 0.1g / ml, stir until completely dissolved to obtain a yellow solution ;

[0034] (2) Continue to stir, the yellow solution becomes a transparent light blue solution;

[0035] (3) Spin coating 30s on the cleaned FTO conductive glass at a speed of 3000 rpm;

[0036] (4) The spin-coated substrate is heated in an oven at 150 degrees Celsius for 15 minutes;

[0037] (5) In order to obtain better film quality, repeat the steps (3) and (4) above three times to obtain a stable performance tungsten oxide electron transport layer material;

[0038] The crystal form of the tungsten oxide film obtained by the above preparation method is consistent with the standard powder diffraction card (JCPDS: 36-1451). On the basis of the prepared electron transport layer, the perovskite layer and the hole transport layer Spiro-OMeTAD were spin-c...

Example Embodiment

[0039] Example 2

[0040] (1) Measure 5ml of isopropanol solution, weigh 0.25g of tungsten hexachloride, dissolve tungsten hexachloride in isopropanol to obtain a solubility of 0.05g / ml, stir until completely dissolved to obtain a yellow solution ;

[0041] (2) Continue to stir, the yellow solution turns into a transparent light blue solution;

[0042] (3) Spin coating on the cleaned FTO conductive glass at a speed of 2500rmp for 40s;

[0043] (4) The spin-coated substrate is heated in an oven at 150 degrees Celsius for 25 minutes;

[0044] (5) In order to obtain better film quality, repeat the steps (3) and (4) above three times to obtain a stable performance tungsten oxide electron transport layer material;

[0045] The crystal form of the tungsten oxide film obtained by the above preparation method is consistent with the standard powder diffraction card (JCPDS: 36-1451). On the basis of the prepared electron transport layer, the perovskite layer and the hole transport layer Spiro-OM...

Example Embodiment

[0047] Example 3

[0048] (1) Measure 5ml of n-butanol solution, weigh 0.5g of tungsten hexachloride, dissolve tungsten hexachloride in n-butanol to obtain a solubility of 0.1g / ml, stir until completely dissolved to obtain a yellow solution ;

[0049] (2) Continue to stir, the yellow solution becomes a transparent light blue solution;

[0050] (3) Spin coating on the cleaned FTO conductive glass at a speed of 3500rmp for 30s;

[0051] (4) The spin-coated substrate is heated in an oven at 150 degrees Celsius for 20 minutes;

[0052] (5) In order to obtain better film quality, repeat the above steps (3) and (4) three times to obtain a stable performance tungsten oxide electron transport layer material;

[0053] The crystal form of the tungsten oxide film obtained by the above preparation method is consistent with the standard powder diffraction card (JCPDS: 36-1451). On the basis of the prepared electron transport layer, the perovskite layer and the hole transport layer Spiro-OMeTAD were...

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Abstract

The invention relates to a preparation method, a product and an application of a tungsten oxide electron transfer layer. The tungsten oxide electron transfer layer is prepared by WO<x> at a low temperature, and batch synthesis of the tungsten oxide electron transfer layer can be realized on a conductive glass substrate; the preparation method comprises the steps of weighing 5ml of alcohol solution, weighing a certain amount of tungsten hexachloride to be dissolved into a solvent alcohol, and performing stirring until the solution is fully dissolved to obtain a yellow solution; performing continuous stirring until the yellow solution is changed into a transparent shallow blue solution; performing spin coating on cleaned FTO conductive glass for 30s; performing heating on the spin-coated substrate in a drying oven at a temperature of 150 DEG C; and repeatedly executing the steps for 2-4 times to obtain the tungsten oxide electron transfer layer with high performance. The electron transfer layer prepared at the temperature of 150 DEG C obtains efficiency of 8.3%. The electron transfer layer prepared by the method does not need the complex processes of high-temperature sintering and the like, and simple and convenient preparation method and technological process, large parameter adjustable range, high repeatability and low energy consumption are achieved, so that the battery manufacturing cost is lowered effectively, and large-scale technology popularization can be promoted.

Description

technical field [0001] The invention relates to a preparation method of a tungsten oxide electron transport layer and its product and application, belonging to the technical field of inorganic nanometer materials and synthesis. Background technique [0002] In the field of solar cell research, perovskite solar cells have great application potential as a new type of solar cell, and the photoelectric conversion efficiency has increased from the initial 4% to the current 22%. Perovskite materials have excellent comprehensive properties, and can simultaneously complete multiple processes such as the absorption of incident light, the excitation, transport, and separation of photogenerated carriers. The extinction coefficient is high and the band gap width is appropriate, and electrons and holes can be transported simultaneously. . Perovskite solar cells have a simple structure and can be fabricated at low temperatures under mild conditions. [0003] As a carrier for charge sepa...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L51/42H01L51/44
CPCH01L31/18H10K30/80H10K30/00Y02E10/549Y02P70/50
Inventor 何丹农杜以博林琳周移金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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