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A kind of preparation method of flexible bnt ferroelectric film

A ferroelectric thin film and flexible technology, applied in the field of preparation of flexible BNT ferroelectric thin films, can solve the problems of poor fatigue performance of perovskite structure ferroelectric materials and poor thermal stability of substrates, and achieve solution concentration optimization and excellent ferroelectric performance. Effect

Active Publication Date: 2020-11-06
XIANGTAN UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the disadvantages of poor thermal stability of the substrate and poor fatigue performance of perovskite structure ferroelectric materials in the prior art, and provide a flexible BNT iron with simple, convenient, low cost, stable preparation process and good performance. Preparation method of electric thin film

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  • A kind of preparation method of flexible bnt ferroelectric film
  • A kind of preparation method of flexible bnt ferroelectric film
  • A kind of preparation method of flexible bnt ferroelectric film

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Embodiment Construction

[0027] The technical solution of the present invention will be described in further detail below in conjunction with specific embodiments of the accompanying drawings.

[0028] A kind of method for preparing flexible BNT ferroelectric film by sol-gel method, is characterized in that, comprises the following steps:

[0029] 1.1 Preparation of single crystal muscovite sheet and preparation of bottom electrode: Select a smooth, crack-free, and impurity-free muscovite sheet, then paste the mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm; then a layer of cobalt ferrite CoFe is prepared on the single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, wherein the thickness of the CFO is 10nm, and th...

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Abstract

The invention discloses a method for preparing a flexible BNT ferroelectric thin film. The method comprises the following steps: 1) using a laser pulse deposition method to prepare a strontium ruthenate bottom electrode on a muscovite substrate; 2) preparing a BNT ferroelectric film by using a sol-gel method The precursor solution of electric thin film, wherein, the concentration of precursor solution is 0.05-0.1mol / L; 3) Adopt spin-coating method to spin-coat BNT precursor solution on above-mentioned strontium ruthenate bottom electrode, obtain uniform wet film; 4) Drying, pyrolysis, and annealing the uniform wet film prepared above; 5) repeating steps 3)-4) 4-6 times to obtain a flexible BNT ferroelectric film, the thickness of which is 200nm-300nm. The invention provides a flexible BNT ferroelectric film material with simple process and excellent ferroelectric performance.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric thin film and device preparation, and in particular relates to a method for preparing a flexible BNT ferroelectric thin film. Background technique [0002] Ferroelectric thin film materials are two-dimensional materials that have spontaneous polarization at a certain temperature, and the direction of spontaneous polarization can be reversed due to the reversal of the direction of the external electric field. Ferroelectric thin films have important properties such as ferroelectricity, dielectricity, and piezoelectricity, and can be used to make important new components such as ferroelectric memories, dielectric phase shifters, and voltage-controlled filters. Because of its small size, low working voltage, and easy development of small devices, it has broad application prospects in high-tech fields such as microelectronics, micromechanics, and microelectromechanics. The ferroelectric memory p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/14G11C11/22H01L43/08H10N50/10
CPCG11C11/14G11C11/22H10N50/10
Inventor 蒋丽梅涂楠英姜杰周益春
Owner XIANGTAN UNIV
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