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A kind of graphene transistor and preparation method thereof

A graphene and transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem that graphene transistors cannot be turned off, and achieve a technology suitable for large-scale promotion and production, ingenious design and simple structure. Effect

Active Publication Date: 2019-11-19
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the embodiments of the present invention is to provide a graphene transistor and its preparation method, aiming to solve the problem that the graphene transistor cannot be turned off due to the lack of a band gap of graphene, which utilizes the transport characteristics of carriers in the graphene PN junction, Realizing free switching of graphene transistors

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  • A kind of graphene transistor and preparation method thereof
  • A kind of graphene transistor and preparation method thereof
  • A kind of graphene transistor and preparation method thereof

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preparation example Construction

[0025] A method for preparing a graphene transistor, comprising the steps of:

[0026] Make a graphene PN junction on the substrate;

[0027] Make source and drain contact electrodes on both sides of the graphene PN junction;

[0028] In the P region or N region of the graphene PN junction, a gate forming an angle of 45° with the junction region is fabricated, and the gate runs through the P region or N region.

[0029] Preferably, the source and drain contact electrodes are parallel to the junction region of the graphene PN junction.

[0030] Preferably, the making of graphene PN junction comprises the following steps:

[0031] growing an N-type graphene layer on the substrate;

[0032] The N-region that needs to be kept is covered with a medium, and a P-type graphene layer is made in the bare area by element doping or surface doping, and the covering medium of the N-region is removed;

[0033] Or grow a P-type graphene layer on the substrate;

[0034] The P region that ...

Embodiment 1

[0045] see figure 1 , a method for preparing a graphene transistor provided in Embodiment 1 of the present invention, comprising steps:

[0046] S101: On a high-purity semi-insulating silicon carbide substrate, generate N-type single-layer epitaxial graphene by thermal decomposition;

[0047] S102: Electron beam evaporating the aluminum oxide protective layer on the region where the N-type doping needs to be retained;

[0048] S103: placing the sample in a vacuum chamber, and annealing in a hydrogen atmosphere at 700°C for 1 hour to form a P-type doped graphene region;

[0049] S104: remove the aluminum oxide protective layer, and form a graphene PN junction by photolithography;

[0050] S105: Electron beam evaporation of 200nm thick gold as source and drain contact electrodes;

[0051] S106: In the graphene PN junction N region, a T-shaped grid with an angle of 45° to the graphene PN junction and a length of 30nm is formed by the electron beam direct writing process, the e...

Embodiment 2

[0056] see Figure 5 , a method for preparing a graphene transistor provided in Embodiment 2 of the present invention, comprising steps:

[0057] S201: On a high-purity semi-insulating silicon carbide substrate, generate P-type single-layer epitaxial graphene by chemical vapor deposition;

[0058] S202: Electron beam evaporating the palladium metal protective layer on the region where the P-type doping needs to be retained;

[0059] S203: coating the surface of the sample with bibenzylpyridine to form an N-type doped graphene region;

[0060] S204: remove the palladium metal protective layer, and form a graphene PN junction by photolithography;

[0061] S205: Electron beam evaporation of 500nm thick palladium, photolithography to form source and drain contact electrodes;

[0062] S206: In the graphene PN junction P region, form a Y-shaped grid with an angle of 45° with the graphene PN junction and a length of 1 μm through the electron beam direct writing process, electron b...

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Abstract

The invention discloses a graphene transistor and a preparation method, and belongs to the technical field of semiconductor devices. The graphene transistor comprises a substrate, a grapheme PN junction is arranged on an upper surface of the substrate, source and drain contact electrodes are arranged on the two sides of the grapheme PN junction, and a grid electrode forming a 45-degree included angle with the grapheme PN junction is arranged in a P area or an N area of the grapheme PN junction. The method comprises the following steps: preparing the grapheme PN junction on the substrate; preparing the source and drain contact electrodes on the two sides of the grapheme PN junction; and preparing the grid electrode forming the 45-degree included angle with the grapheme PN junction on the grapheme PN junction. By means of the related characteristics of the possibility of carriers in the grapheme PN junction to pass through the PN junction and the included angle of the PN junction, the grid electrode forming the 45-degree included angle with the grapheme PN junction is prepared in the P area or the N area of the grapheme PN junction, so that the carriers are completely reflected whenpassing through the two PN junctions forming the 45-degree included angle, and then the free opening and closing of the graphene transistor is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a graphene transistor and a preparation method. Background technique [0002] Graphene is a new carbonaceous material in which a single layer of carbon atoms is tightly packed into a two-dimensional honeycomb lattice structure. Due to the special electronic energy spectrum of graphene, its charge carriers are massless Dirac fermions. Graphene has ballistic transport properties at room temperature, its chemical and mechanical stability and nanoscale scalability make it a very prominent application prospect in the research of nano-optoelectronic devices and semiconductor devices. Its ultra-high carrier mobility, thermal conductivity and other characteristics make it very suitable for making high-speed electronic devices. However, since graphene has no band gap, the device cannot be turned off, making it difficult to make logic devices. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/423H01L21/336
CPCH01L29/42356H01L29/42384H01L29/66742H01L29/78684
Inventor 蔚翠何泽召刘庆彬宋旭波王晶晶周闯杰郭建超冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP