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Intermediate-band solar absorption semiconductor and preparation method thereof

A solar energy absorption and semiconductor technology, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of scarce types of semiconductor materials in the middle zone, and achieve the effect of easy operation and simple process

Active Publication Date: 2018-05-29
SHANGHAI DIANJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Judging from the current research status at home and abroad, there is no research on choosing Ni atoms to replace MgIn. 2 S 4 There are reports on the use of cationic In sites to regulate the photoelectric properties of acceptor semiconductors. The types of mid-band semiconductor materials with broad-spectrum solar energy absorption are still very rare, and it is necessary to develop new inorganic photoelectric functional materials.

Method used

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  • Intermediate-band solar absorption semiconductor and preparation method thereof
  • Intermediate-band solar absorption semiconductor and preparation method thereof
  • Intermediate-band solar absorption semiconductor and preparation method thereof

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Experimental program
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Embodiment 1

[0036] Mg powder (purity 99.99%), In particles (purity 99.999%), S powder (purity 99.999%), Ni powder (purity 99.99%) according to MgIn 2-x Ni x S 4 Weigh the stoichiometric ratio of (x=0, 0.05, 0.1), put the reaction raw materials into the quartz glass tube, and seal the quartz glass tube with hydrogen-oxygen flame; put the fused quartz glass tube into the programmed temperature control In the Furnace, slowly heat up to 750°C at a rate of 2°C / min for sintering and hold for 24 hours, then cool down to room temperature with the furnace; after opening the tube, grind the obtained sample in an agate mortar, and vacuum seal it in a quartz glass tube , and placed in a temperature-programmed muffle furnace, slowly heated up to 750°C at a rate of 2°C / min and then sintered and held for 48 hours. The sample was cooled to room temperature with the furnace, and then ground again after opening the tube.

Embodiment 2

[0038] Mg powder (purity 99.99%), In particles (purity 99.999%), S powder (purity 99.999%), Ni powder (purity 99.99%) according to MgIn 2-x Ni x S 4Weigh the stoichiometric ratio of (x=0, 0.05, 0.1), put the reaction raw materials into the quartz glass tube, and seal the quartz glass tube with hydrogen-oxygen flame; put the fused quartz glass tube into the programmed temperature control In the Furnace, the temperature was slowly raised to 700°C at a rate of 5°C / min and kept for 48 hours, and then cooled to room temperature with the furnace; after the tube was opened, the obtained sample was ground in an agate mortar and vacuum-packed in a quartz glass tube. And put it in a temperature-programmed muffle furnace, then slowly raise the temperature to 700°C at a rate of 5°C / min and then sinter and hold it for 48 hours. The sample is cooled to room temperature with the furnace, and then ground again after opening the tube.

Embodiment 3

[0040] Binary compounds of Mg, In, S and Ni with a purity of not less than 99.99% according to MgIn 2-x Ni x S 4 Weigh the stoichiometric ratio of (x=0, 0.05, 0.1), put the reaction raw materials into the quartz glass tube, and seal the quartz glass tube with hydrogen-oxygen flame; put the fused quartz glass tube into the programmed temperature control In the Furnace, the temperature was slowly raised to 800°C at a rate of 3°C / min and kept for 24 hours, and then cooled to room temperature with the furnace; after opening the tube, the obtained sample was ground in an agate mortar, and vacuum-packed in a quartz glass tube. And put it in a temperature-programmed muffle furnace, then slowly raise the temperature to 800°C at a rate of 3°C / min and then sinter and hold it for 48 hours. The sample is cooled to room temperature with the furnace, and then ground again after opening the tube.

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Abstract

The invention discloses an intermediate-band solar absorption semiconductor and a preparation method thereof. The chemical formula of the semiconductor is MgIn2-xNixS4, wherein x is larger than 0 andis smaller than 2, some In atoms in a MgIn2S4 ternary compound is substituted by Ni atoms to obtain MgIn2-xNixS4, then Mg, In, S and Ni raw materials are weighed according to the stoichiometric ratioof the MgIn2-xNixS4, the materials are sealed in a quartz glass tube in a vacuum mode to be heated to 700 DEG C to 800 DEG C to carry out reaction sintering, the temperature is maintained for 24 to 48hours and then the materials are cooled with a furnace, and then the secondary reaction sintering is carried out under the same condition to obtain the semiconductor. The obtained intermediate-band solar absorption semiconductor has multi-bandgap broad-spectrum solar absorption ability, and the development of intermediate-band semiconductor materials and high-efficiency solar cell technology is hopefully promoted.

Description

technical field [0001] The invention belongs to the technical field of photoelectric conversion semiconductor materials, and in particular relates to an intermediate band solar energy absorbing semiconductor and a preparation method thereof. Background technique [0002] In mainstream solar cell absorbing semiconductor materials such as silicon (Si), copper indium gallium selenide (CIGS), and cadmium telluride (CdTe), photons with energy less than and beyond the bandwidth cannot be converted into photocurrent by semiconductors, resulting in limited solar cell efficiency. Through impurity band engineering, after introducing a half-filled intermediate energy band into the band gap of the parent compound of the semiconductor, electrons are excited from the valence band to the conduction band, and electrons are excited from the valence band to the empty band of the intermediate band and from the full state of the intermediate band Excited to the conduction band, the photons with...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/04H01L31/18
CPCH01L31/032H01L31/0321H01L31/04H01L31/18Y02E10/50Y02P70/50
Inventor 陈平马学亮张华王永存
Owner SHANGHAI DIANJI UNIV