Multi-wavelength semiconductor distributed feedback laser array and fabrication method thereof
A technology of laser array and distributed feedback, which is applied in the direction of semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve problems that affect device performance, background pollution in reaction chambers, and not mass-produce high-speed lasers, etc., to reduce process steps , reduce the interface oxide layer, reduce the effect of loss
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[0053] The present invention proposes a method for preparing a multi-wavelength semiconductor distributed feedback laser array, including a laser array formed by a plurality of light-emitting units, including the following steps:
[0054] Step 1, epitaxial buffer layer, active region and grating layer on the substrate;
[0055] Step 2, forming gratings in the grating layer by Talbot interference exposure and etching methods, the gratings have more than two periods corresponding to more than two emission wavelengths;
[0056] Step 3, completing the preparation of the laser array.
[0057] The above-mentioned Talbot interference exposure method is an interference exposure realized by using the Talbot effect, that is, when a beam of plane waves is incident on a periodic grating, repeated light intensity image gratings will appear at a specific distance from the grating plane, so Using photolithographic plate designs with different periods, the production of gratings with differe...
Embodiment 1
[0086] This embodiment provides a method for preparing a multi-wavelength semiconductor distributed feedback laser array, including the following steps:
[0087] Step 1, such as figure 1 As shown, an InP buffer layer 2, a multi-quantum well active region 3 and a grating layer 4 are epitaxially grown on an n-type InP substrate 1; wherein, an interlayer InGaAsP etching stop layer 5 is epitaxially grown in the InP buffer layer 2, and The upper surface of the InGaAsP etching stop layer 5 has a thickness of 100-600 nm from the lower boundary of the active region; the multi-quantum well active region 3 is an AlGaInAs gain material, and the grating layer 4 is an unstrained InGaAsP material;
[0088] Step 2, such as figure 2 As shown, a grating structure is formed on the grating layer 4 by using Talbot interference exposure and dry etching, wherein Talbot interference exposure uses photolithography plates with different periodic designs to form gratings with different periods; ima...
Embodiment 2
[0099] This embodiment provides a method for preparing a high-speed multi-wavelength laser array applied to waveguide multiplex output, including the following steps:
[0100] Step 1. Epitaxial growth of InP buffer layer 2, multi-quantum well active region 3 and grating layer 4 on n-type InP substrate 1; multi-quantum well active region 3 is InGaAsP gain material, and grating layer 4 is unstrained InGaAsP Material;
[0101] Step 2, using Talbot interference exposure and dry etching to form a grating structure on the grating layer 4, wherein Talbot interference exposure uses photolithographic plates with different periodic designs to form gratings with different periods; image 3 The top view after forming gratings with different periods for the laser array, where 41, 42, 43, etc. indicate that the design periods are Λ 1 , Λ 2 , Λ 3 etc. raster area;
[0102] Step 3, completing the preparation of the laser array, specifically including the following steps:
[0103] Step 3-...
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