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Photodiode matrix with isolated cathodes

A photodiode and array technology, applied in the direction of diodes, circuits, electrical components, etc., can solve the problem of deteriorating the quality of photodiodes

Inactive Publication Date: 2018-06-08
NEW IMAGING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, experience has shown that damage associated with the etching of these trenches considerably deteriorates the quality of the photodiode, especially with regard to dark current

Method used

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  • Photodiode matrix with isolated cathodes
  • Photodiode matrix with isolated cathodes
  • Photodiode matrix with isolated cathodes

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Embodiment Construction

[0054] In the following description, as an illustrative example, the first type of conductivity is N-type conductivity, and the second type of conductivity is P-type conductivity. By changing the components, it is also possible that the first type of conductivity is P-type conductivity and the second type of conductivity is N-type conductivity.

[0055] refer to Figure 5 and Image 6 , the photodiode array according to one embodiment of the present invention comprises an indium phosphide InP substrate 4 having N-type conductivity, said substrate 4 being preferably N-doped, ie doped with N-type doping such as silicon element. For example, the carrier concentration of the substrate 4 can be at 10 17 with 10 19 cm -3 between.

[0056] The array also comprises an InGaAs active layer 5 on top of a substrate 4, which constitutes a photosensitive layer. The thickness of the active layer is preferably greater than 3 μm, and preferably less than 5 μm. The active layer 5 can be ...

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Abstract

The invention relates to a photodiode matrix and to the method for manufacturing same, said matrix comprising a substrate (4) of indium phosphide, an active layer (5) of indium gallium arsenide abovethe substrate (4), a buried region (8) between the substrate (4) and the active layer (5), and an upper layer (6) made of indium phosphide above the active layer (5), a photodiode anode made up of a doped region (12), said doped region (12) extending from the upper layer (6) into the active layer (5) without reaching the buried region (8), said doped region (12) defining a plurality of cathode areas (13) of the upper layer (6) isolated from one another by the doped region (12).

Description

technical field [0001] The present invention relates to a photodiode array, more particularly to a photodiode array having an indium gallium arsenide (InGaAs) layer and an indium phosphide (InP) layer; the invention also relates to a manufacturing method of the photodiode array. Background technique [0002] One way to fabricate photodiode arrays (commonly used for infrared light detection) in a semiconductor material with a narrow bandgap is to insert an active detection layer with a narrow bandgap between two semiconductor materials with a wide bandgap. between. The two semiconductor layers with wide bandgap constitute effective protection / passivation while remaining transparent to the wavelength of radiation intended to be detected by the photodiode. [0003] Furthermore, with proper doping, the two heterojunctions between the active layer and the two protective / passivation layers confine photoelectric charges in the active detection layer and increase the quantum yield ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/14649H01L27/14694H01L27/14643
Inventor Y·尼
Owner NEW IMAGING TECH