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A method for enhancing visible light emission at zns doping level of quantum dots doped with transition metal elements

A technology of transition metal elements and quantum dots, applied in electrical components, semiconductor devices, circuits, etc., can solve the problem of insignificant effect of luminescence enhancement

Active Publication Date: 2020-08-04
ZHEJIANG UNIV CITY COLLEGE
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Problems solved by technology

Although these methods have a certain effect on the spectral tuning of luminescence, the effect of luminescence enhancement is not obvious

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  • A method for enhancing visible light emission at zns doping level of quantum dots doped with transition metal elements
  • A method for enhancing visible light emission at zns doping level of quantum dots doped with transition metal elements
  • A method for enhancing visible light emission at zns doping level of quantum dots doped with transition metal elements

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the examples. The description of the following examples is provided only to aid the understanding of the present invention. It should be pointed out that for those skilled in the art, without departing from the principle of the present invention, some improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

[0026] In the implementation process, the gold nanomaterial is used as the plasma, and the ZnS doped with manganese is used as the quantum dot material. ZnS:Mn nanocrystals were synthesized by chemical method using PVP as surface ligand. High-resolution transmission electron microscopy (HR-TEM) images show that the ZnS:Mn quantum dots have a radius of about 4nm and obvious lattice fringes. image 3 Shown (ZnS doped with manganese as the test pattern of quantum d...

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Abstract

The invention relates to an enhancement method for visible light emission of ZnS doping level of quantum dots doped with transition metal elements. The method comprises the steps that ZnS doped Mn quantum dots are prepared by a sol-gel method; a metal nanostructure is evaporated on a Si wafer through a vacuum evaporation technology; a Ti / Ag nanostructure with two bow tie types is prepared throughelectron beam etching; a layer of SiO2 material is deposited on the surface of a metal nanomaterial through vapor-phase evaporation, and the thickness of the SiO2 material is 2 to 3nm; and the prepared ZnS quantum dots are spin coated on the surface of a nano-island film structure. According to the invention, in experiments, the ZnS quantum dots doped with Mn elements are prepared; through the regulation of the size and shape of nanometals and the relative position between particles, the extinction spectrum and the doping level of the ZnS quantum dots are in the strongest resonance coupling effect; and by annealing the metal island film at 120 DEG C for 30 minutes, the strongest luminescence of the ZnS doping level caused by the plasmon resonance of metal nanoparticles is acquired.

Description

technical field [0001] The invention relates to a composite structure composed of a nanometer metal structure and a quantum dot, which belongs to the field of nanometer semiconductor material luminescence and plasmon resonance enhancement. Background technique [0002] Nano-semiconductor materials have unique advantages in photoelectric and electro-optical conversion, and this material is academically called quantum dots. By adjusting the shape and size of the quantum dots, its band gap can meet the requirements of the device. Doping various elements in quantum dots can also realize the spectral tuning of quantum dots. For example, Michael studied the low-concentration transition metal (Mn 2+ , Cu 2+ , Ni 2+ ) doping realizes the luminescence of visible light, but compared with the intrinsic luminescence (ultraviolet luminescence), the luminescence of the doped energy level is relatively weak. So far, people have adopted many methods to adjust the luminescence of quantum...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/28H01L33/00
CPCH01L33/0087H01L33/06H01L33/285
Inventor 毕岗翟继志陆开诚郭观星陈浩
Owner ZHEJIANG UNIV CITY COLLEGE
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