Method of preparing perovskite nanocrystalline film by spraying

A nanocrystal and perovskite technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of uneven film, inability to evaporate to dryness quickly, poor solution stability, etc. Film speed effect

Active Publication Date: 2018-07-06
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing spraying method does not use substrate heating in the process of preparing nanocrystalline films, and the droplets formed by continuous spraying cannot evaporate quickly on the surface of the substrate, forming an uneven film
Various types of perovskite nanocrystals are synthesized by the solution method,

Method used

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  • Method of preparing perovskite nanocrystalline film by spraying
  • Method of preparing perovskite nanocrystalline film by spraying
  • Method of preparing perovskite nanocrystalline film by spraying

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1) CsPbBr 3 Quantum dots were dispersed into n-hexane to obtain CsPbBr at a concentration of 0.5 mg / mL 3 Quantum dot dispersion;

[0031] 2) CsPbBr 3 Put the quantum dot dispersion into a spray bottle and install it on the spray gun. The base area is 2×2cm 2 , adjust the distance between the spray gun and the horizontally placed glass substrate to be 4cm, through EFD's Ultimus TM The I dispensing platform can precisely control the air pressure to 100Kpa, and the liquid output of the spray gun is 0.02mL / s;

[0032] 3) Move the substrate on the horizontal displacement stage at a constant speed, and spray at 25°C for 30s;

[0033] 4) CsPbBr 3 The quantum dot film was annealed on a hot stage at 90° C. for 15 minutes to obtain a perovskite nanocrystalline film.

Embodiment 2

[0035] 1) CsPbBr 3 Quantum dots were dispersed into n-hexane to obtain CsPbBr at a concentration of 0.5 mg / mL 3 Quantum dot dispersion;

[0036] 2) CsPbBr 3 Put the quantum dot dispersion into a spray bottle and install it on the spray gun. The base area is 2×2cm 2 , adjust the distance between the spray gun and the horizontally placed silicon wafer substrate to be 4cm, through EFD's Ultimus TM The I dispensing platform can precisely control the air pressure to 100Kpa, and the liquid output of the spray gun is 0.02mL / s;

[0037] 3) After heating the substrate to 60°C, move the substrate on the horizontal displacement stage at a constant speed, and spray for 30s;

[0038] 4) CsPbBr 3 The quantum dot film was annealed on a hot stage at 90 °C for 15 min.

Embodiment 3

[0040] 1) CsPbBr 3 Quantum dots were dispersed into n-hexane to obtain CsPbBr at a concentration of 0.5 mg / mL 3 Quantum dot dispersion;

[0041] 2) CsPbBr 3 Put the quantum dot dispersion into a spray bottle and install it on the spray gun. The base area is 2×2cm 2 , adjust the distance between the spray gun and the horizontally placed PET substrate to be 4cm, through EFD's Ultimus TM The I dispensing platform can precisely control the air pressure to 100Kpa, and the liquid output of the spray gun is 0.02mL / s;

[0042]3) After heating the substrate to 90°C, move the substrate on the horizontal displacement stage at a constant speed, and spray for 30s;

[0043] 4) CsPbBr 3 The quantum dot film was annealed on a hot stage at 90 °C for 15 min.

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Abstract

A method of preparing a perovskite nanocrystalline film by spraying comprises the following steps: dispersing perovskite nanocrystalline in organic solvent to obtain perovskite nanocrystalline dispersion; putting the perovskite nanocrystalline dispersion in a spray bottle, installing the spray bottle on a spray gun, and adjusting the distance between the spray gun and a base and the liquid outletrate and air pressure of the spray gun; and carrying out spraying after the base is heated, and carrying out annealing to obtain a perovskite nanocrystalline film. The perovskite nanocrystalline filmobtained has high compactness and a flat surface, and can be used to prepare solar cells, photoelectric detectors, light emitting diodes and other photovoltaic devices. The method has the advantages of high material utilization rate, fast film forming and large-area preparation.

Description

technical field [0001] The invention belongs to the field of preparation of nanocrystalline thin films, and in particular relates to a method for preparing perovskite nanocrystalline thin films by spraying. Background technique [0002] In recent years, the solution-based controllable preparation of metal and semiconductor nanocrystalline materials has developed by leaps and bounds. A film preparation process to obtain dense and flat nanocrystalline films with adjustable thickness. A variety of preparation processes for solution-processable nanocrystalline films include spin-coating, pull-up, spray-coating, and solution self-assembly methods, but their applicable occasions are not the same. The spin coating method uses centrifugal force to shake off excess solvent and solute from the substrate, and can prepare nanocrystalline films with a thickness of tens to hundreds of nanometers. The disadvantage is that it is only suitable for the preparation of small-area films, and th...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/56B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K71/12Y02E10/549
Inventor 杨智汪敏强李军杰窦金娟
Owner XI AN JIAOTONG UNIV
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