Graphite resistance heating SiC crystal growth furnace

Abstract

The invention discloses a graphite resistance heating SiC crystal growth furnace. The graphite resistance heating SiC crystal growth furnace comprises a furnace chamber, a crucible and a heating unit,wherein an upper flange cover and a lower flange cover are respectively arranged at the upper end and the lower end of the furnace chamber; an upper furnace cover is arranged on the upper flange cover; the crucible is arranged in the furnace chamber; a seed crystal cover is arranged on the upper part of the crucible; both of heat-insulating felts are arranged above the crucible and below the crucible; at least one section of graphite heating units are arranged on the outer part of the crucible from bottom to top; the graphite heating units are used for heating graphite resistance; each section of the graphite heating units is separately provided with a corresponding heating power control device; a corresponding heat insulating layer is arranged at the periphery of each section of the heating units. The growth furnace adopts multi-section graphite resistance heating, so that control of a crystal growth temperature field can be conveniently carried out, including a temperature gradientof a growth interface forward position and length of a growth constant-temperature zone. The growth furnace can be used for growing large-sized SiC crystals with high quality, so that the diameter andthe thickness of a product can be greatly improved, a utilization ratio of the SiC crystal is greatly improved, and the growth cost of the SiC crystal is reduced.

Description

technical field [0001] The invention relates to a graphite resistance heating SiC crystal growth furnace, which belongs to the technical field of semiconductor crystal growth equipment. Background technique [0002] SiC (silicon carbide) is a representative of the third-generation wide bandgap semiconductor. It has a large bandgap, high critical breakdown electric field strength, high carrier saturation migration velocity, high thermal conductivity, radiation resistance and corrosion resistance, and has Excellent chemical and thermal stability makes it an ideal semiconductor material for making high frequency, high power, high temperature resistant and radiation resistant devices. Microwave devices and solid-state sensors have very important applications. With the further development of SiC semiconductor technology, the application of SiC materials and devices is becoming more and more extensive. This also puts forward higher requirements for the size, quality, and yield of...

AI Technical Summary

Problems solved by technology

[0008] The present invention aims at the above technical problems existing in the existing SiC crystal growth, and provides a graphite resistance heating SiC crystal growth furnace capable of growing large diameter and large thickness SiC crystals

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