Preparation method of pa-mbe homoepitaxial high-quality gan single crystal thin film
A single crystal thin film and homoepitaxial technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of not finding patent documents, etc., and achieve the effect of good surface flatness and good crystal quality
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Embodiment 1
[0036] like figure 1 As shown in the figure, the preparation method of the PA-MBE homoepitaxial high-quality GaN single crystal thin film includes the following steps:
[0037] 1.) Evaporate a layer of metal Ti film on the back of the C-plane GaN substrate with a thickness of about 1.0 μm;
[0038] 2.) Pump the vacuum degree of the MBE buffer chamber into GaN substrate to 1×10 -8 After Torr, the substrate was heated to 450°C, and the baking and degassing time was 1.0h;
[0039] 3.) Use the beam detector to analyze the beam current of the metal Ga source introduced into the MBE growth chamber. By controlling the temperature of the top and bottom of the metal crucible in the MBE, the beam current of the metal Ga source is controlled at 5.63×10 -7 Torr;
[0040] 4.) After the GaN substrate placed in the growth chamber is heated to 400°C at a heating rate of 20°C / min, a flow rate of 3 sccm of N is introduced into the plasma generator. 2 ; Turn on the plasma generator and incr...
Embodiment 2
[0048] The preparation method of the PA-MBE homoepitaxial high-quality GaN single crystal thin film includes the following steps:
[0049] 1.) Evaporate metal Mo on the back of the GaN substrate, with a thickness of about 0.8 μm;
[0050] 2.) Pump the vacuum degree of the MBE buffer chamber into GaN substrate to 1×10 -6 After Torr, the substrate was heated to 350°C, and the baking and degassing time was 0.5h;
[0051] 3.) Using the beam detector, by controlling the temperature of the top and bottom of the metal crucible in the MBE, the beam current of the metal Ga source is controlled at 1 × 10 6 Torr;
[0052] 4.) After the GaN substrate placed in the growth chamber is heated to 350°C at a heating rate of 15°C / min, a flow rate of 2sccm of N is introduced into the plasma generator. 2 ; Turn on the plasma generator and increase the power of the plasma generator to 500W; when the high-purity N of the plasma generator is introduced 2 After turning into a plasma state, reduce ...
Embodiment 3
[0060] The preparation method of the PA-MBE homoepitaxial high-quality GaN single crystal thin film includes the following steps:
[0061] 1.) The backside of the GaN substrate is vapor-deposited with metal Ti, with a thickness of about 1.5 μm;
[0062] 2.) Pump the vacuum degree of the MBE buffer chamber into GaN substrate to 1×10 -8 After Torr, the substrate was heated to 500°C, and the baking and degassing time was 2.0h;
[0063] 3.) Using the beam detector, by controlling the temperature of the top and bottom of the metal crucible inside the MBE, the beam current of the metal source is controlled at 1 × 10 -8 Torr;
[0064] 4.) After the GaN substrate placed in the growth chamber is heated to 450°C at a heating rate of 25°C / min, a flow rate of 4sccm of N is introduced into the plasma generator. 2 ; Turn on the plasma generator and increase the power of the plasma generator to 350W; when the high-purity N of the plasma generator is introduced 2 After turning into a plas...
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