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Vertical-structure LED chip for preparing Ag reflector by using two-step method and preparation method of LED chip

An LED chip, vertical structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing p-GaN hole carrier concentration, high resistance of Ag layer, poor adhesion, etc., to improve light output power. and external quantum efficiency, increasing hole carrier concentration, preventing Ag clusters

Pending Publication Date: 2018-07-27
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of sputtering Ag, the surface of p-GaN is often damaged due to excessive sputtering power, resulting in the formation of a high-resistance passivation layer on the surface of p-GaN, which reduces the doping concentration of Mg acceptors, thereby reducing the The concentration of hole carriers in the medium ultimately affects the light extraction efficiency of vertical structure LEDs
However, if the sputtering Ag rate is too low, the deposition time of the Ag layer will be too long, the adhesion will be too poor, the resistance of the Ag layer will be too high, and the reflection efficiency of the Ag mirror will decrease.

Method used

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  • Vertical-structure LED chip for preparing Ag reflector by using two-step method and preparation method of LED chip
  • Vertical-structure LED chip for preparing Ag reflector by using two-step method and preparation method of LED chip
  • Vertical-structure LED chip for preparing Ag reflector by using two-step method and preparation method of LED chip

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Embodiment 1

[0051] A kind of two-step method prepares the vertical structure LED chip of Ag reflector, comprises the following steps:

[0052] (1) LED epitaxial wafer growth: First, LED epitaxial wafers are epitaxially grown on Si substrates, including n-type doped GaN layers grown on Si substrates, and InGaN / GaN quantum wells grown on n-type doped GaN layers , a p-type doped GaN layer grown on InGaN / GaN quantum wells. The Si substrate has a (111) plane as an epitaxial plane. The n-type doped GaN layer has a thickness of 3um and a doping concentration of 5x10 18 cm -3 ; The InGaN / GaN quantum well is a 10-period InGaN well layer / GaN barrier layer, wherein the thickness of the InGaN well layer is 10nm, and the thickness of the GaN barrier layer is 5nm; the thickness of the p-type doped GaN layer is 300nm , with a doping concentration of 5x10 17 cm -3 .

[0053] (2) The first step of growing the first Ni / Ag-contact ohmic contact layer (sputtering): use magnetron sputtering to sputter ...

Embodiment 2

[0061] A kind of two-step method prepares the vertical structure LED chip of Ag reflector, comprises the following steps:

[0062] (1) LED epitaxial wafer growth: First, LED epitaxial wafers are epitaxially grown on Si substrates, including n-type doped GaN layers grown on Si substrates, and InGaN / GaN quantum wells grown on n-type doped GaN layers , a p-type doped GaN layer grown on InGaN / GaN quantum wells. The Si substrate has a (111) plane as an epitaxial plane. The n-type doped GaN layer has a thickness of 2.5um and a doping concentration of 7x10 18 cm -3 ; The InGaN / GaN quantum well is a 12-period InGaN well layer / GaN barrier layer, wherein the thickness of the InGaN well layer is 9nm, and the thickness of the GaN barrier layer is 5nm; the thickness of the p-type doped GaN layer is 200nm , with a doping concentration of 9x10 17 cm -3 .

[0063] (2) The first step of growing the first Ni / Ag-contact ohmic contact layer (sputtering): use magnetron sputtering on the surf...

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Abstract

The invention discloses a vertical-structure LED chip for preparing a Ag reflector by using a two-step method and a preparation method of the LED chip. The method comprises the steps that an LED epitaxial layer is prepared on a Si substrate, and a Ni / Ag-contact / Ag-bulk / X reflector, a protective layer, a bonding layer, a p electrode pattern and the like are prepared on the LED epitaxial layer; theepitaxial layer is transferred to a Si(100) substrate, and the old growth substrate is stripped; then an MESA channel, a PA layer, an n electrode pattern and an n electrode are prepared, and the vertical-structure LED chip is formed. A Ag-contact layer is introduced through low-frequency radio frequency sputtering and direct-current sputtering, damage to p-GaN is relieved, and annealing is carriedout on Ag-contact but not carried out on a Ag-bulk layer so that the concentration of a p-GaN hole carrier can be increased, the reflectivity of the Ag-bulk layer is not reduced by annealing, and thelight output power and external quantum efficiency of the LED chip are improved.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to a two-step method for preparing an Ag reflector vertical structure LED chip and a preparation method thereof. Background technique [0002] With the gradual application of LEDs in the field of lighting, the market is no longer satisfied with the horizontal structure LEDs driven by small currents on sapphire substrates, and the application of vertical structure LEDs has emerged. Compared with the horizontal structure LED, the vertical structure LED can perfectly solve the poor thermal conductivity, current crowding effect and electrode light absorption effect of the horizontal structure by virtue of its P and N electrodes arranged on both sides, the current is vertically conducted, and the substrate is conductive. Capable of withstanding high current overdrive. The introduction of the reflector allows the vertical structure LED to emit light from one side, so that the external qu...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/10H01L33/12
CPCH01L33/0075H01L33/10H01L33/12Y02P70/50
Inventor 李国强张云鹏张子辰
Owner SOUTH CHINA UNIV OF TECH