A kind of preparation method of p-type SNO2 film

A thin film and powder technology, which is applied in the field of preparation of p-type SnO2 thin films, can solve the problems of high electron carrier concentration, low concentration, poor electrical properties of p-type transparent conductive thin films, etc., to increase the hole carrier concentration, The effect of simple coating technology and strong operability

Active Publication Date: 2019-02-26
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And related such N-type transparent semiconductor films have been applied to optoelectronic devices, microelectronics and integrated circuits, but N-type transparent semiconductor films can only be used to prepare passive devices, which undoubtedly limits the scope of application of transparent conductive films
But due to SnO 2 The electron carrier concentration generated by the intrinsic donor defect is relatively high, and the self-compensation effect of the hole carrier is easy to occur when the P-type doping is performed, so the hole carrier is compensated or the concentration is low
The electrical properties of the currently prepared p-type transparent conductive films are poor, which is difficult to meet practical applications.

Method used

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  • A kind of preparation method of p-type SNO2 film
  • A kind of preparation method of p-type SNO2 film
  • A kind of preparation method of p-type SNO2 film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1) Pretreatment of soda-lime glass substrate. In the experiment, the soda-lime glass substrate should be pretreated first. First, cut the soda-lime glass into the required size with a glass knife, and then calcinate it at 500°C for 3 hours, then clean it with detergent, and then rinse it with deionized water. Then place it in an ultrasonic cleaner and clean it with acetone, absolute ethanol, and deionized water for 15 minutes, and finally dry it with high-purity nitrogen to obtain a substrate with a clean surface required for the experiment.

[0032] (2) Target preparation. GaN with a total weight of 4 g and a purity of 99.999% and SnO with a purity of 99.999% 2 The powder is weighed according to a certain ratio, wherein the GaN powder mass ratio is 15wt.%. Then fully grind the weighed powder with a ball mill, wherein the ball milling time is four hours, and the speed is 2000 rpm; then the powder after the uniform mixing is pressed into tablets, the pressure is cont...

Embodiment 2

[0039] (1) Soda-lime glass pretreatment. With embodiment 1.

[0040] (2) Target preparation. GaN with a total weight of 4 g and a purity of 99.999% and SnO with a purity of 99.999% 2 The powder is weighed according to a certain ratio, wherein the mass ratio of GaN powder is 17.5wt.%. Then fully grind the weighed powder with a ball mill, wherein the ball milling time is four hours, and the speed is 2000 rpm; then the powder after the uniform mixing is pressed into tablets, the pressure is controlled at 13MPa, and the pressure is kept for 5 minutes. The specification is 12mm*4mm (diameter*thickness).

[0041] (3) Electron beam evaporation. With embodiment 1.

[0042] (4) Annealing treatment of soda-lime glass coated with film. With embodiment 1.

[0043] (5) TEST. With embodiment 1.

[0044] The test data is as follows:

[0045]

Embodiment 3

[0047] (1) Soda-lime glass pretreatment. With embodiment 1.

[0048] (2) Target preparation. GaN with a total weight of 4 g and a purity of 99.999% and SnO with a purity of 99.999% 2 The powder is weighed according to a certain ratio, wherein the GaN powder mass ratio is 20wt.%. Then fully grind the weighed powder with a ball mill, wherein the ball milling time is four hours, and the speed is 2000 rpm; then the powder after the uniform mixing is pressed into tablets, the pressure is controlled at 13MPa, and the pressure is kept for 5 minutes. The specification is 12mm*4mm (diameter*thickness).

[0049] (3) Electron beam evaporation. With embodiment 1.

[0050] (4) Annealing treatment of soda-lime glass coated with film. With embodiment 1.

[0051] (5) TEST. With embodiment 1.

[0052] The test data is as follows:

[0053]

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Abstract

The invention discloses a preparation method of a P-type SnO2 film. The preparation method is characterized by comprising the steps of preparing a target material composed of high-purity GaN powder and SnO2 powder, wherein the mass fraction of the GaN powder is 15 to 25 wt.% in the preparation of the target material, coating a GaN doped SnO2 film on a substrate of a base plate through evaporation by utilizing an electronic beam evaporation method in a vacuum environment, and then annealing the substrate coated with the film under the protection of nitrogen, so that the P-type SnO2 film can be obtained, wherein the annealing temperature is 440 DEG C to 460 DEG C. Compared with an existing preparation method that only Ga or N is doped, the hole carrier concentration of the SnO2 film is greatly increased. Under the conditions that the doping amount is 22.5 wt.% and annealing is performed for 30 minutes at 480 DEG C in nitrogen, the P-type SnO2 film of which the hole carrier concentration is 1.797*10<19> cm<3> is obtained. The P-type SnO2 film prepared by adopting the preparation method has stable properties, the preparation method is simple, and a new idea is provided for the preparation of the P-type SnO2 film.

Description

technical field [0001] The invention designs a method for preparing a film, in particular to a P-type SnO 2 The method of film preparation. Background technique [0002] Transparent conductive oxide thin films have great application prospects in thin-film devices due to their excellent optical and electrical properties. SnO 2 Thin film materials have attracted more and more attention due to their properties such as wide bandgap, high mobility, and ultrahigh exciton binding energy, and have been applied in the fields of gas sensors, solar cells, photocatalysts, and lithium-ion batteries. In recent years, N-type doping of tin oxide, such as Sb and F, are very effective in improving the conductivity of tin oxide films. Moreover, related N-type transparent semiconductor films have been applied to optoelectronic devices, microelectronics and integrated circuits, but N-type transparent semiconductor films can only be used to prepare passive devices, which undoubtedly limits the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/30C23C14/08C23C14/58
CPCC23C14/086C23C14/30C23C14/5806
Inventor 何春清徐文武吕术亮周亚伟尹崇山李静静张笑维
Owner WUHAN UNIV
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