Composite material and preparation method thereof, and quantum dot light-emitting diode

A composite material and molar weight technology, applied in the field of nanomaterials, can solve the problems of limited application of p-type ZnO, improve the overall luminous performance and display performance, the preparation method is simple and easy, and the hole carrier concentration is increased. Effect

Active Publication Date: 2021-06-22
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, provide a core-shell nanomaterial and its preparation method and quantum dot light-emitting diodes, aiming to solve the technical problem of limited application of the existing p-type ZnO

Method used

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  • Composite material and preparation method thereof, and quantum dot light-emitting diode

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preparation example Construction

[0021] On the other hand, the embodiment of the present invention also provides a method for preparing a composite material, comprising the following steps:

[0022] S01: Provide zinc salt, lithium salt and nitrogen-containing element precursor salt;

[0023] S02: dissolving the zinc salt, lithium salt and nitrogen-containing element precursor salt in a solvent, and performing heat treatment under alkaline conditions to obtain a precursor solution;

[0024] S03: Annealing the precursor solution to obtain the composite material.

[0025] In the composite preparation method provided in the embodiment of the present invention, the precursor solution is first prepared by using zinc salt, lithium salt and nitrogen-containing element precursor salt, and then the precursor solution is annealed to obtain a Li and N co-doped The composite material of p-type ZnO nanoparticles; the preparation method is a simple sol-gel method, the preparation method is simple and easy, suitable for lar...

Embodiment 1

[0047] Taking zinc chloride, lithium chloride, ammonium chloride, methanol, and sodium hydroxide as examples, the preparation method of Li-N / ZnO composite material will be introduced in detail below.

[0048] First, add appropriate amount of zinc chloride, lithium chloride and ammonium chloride to 50ml of methanol to form a solution with a total concentration of 0.2M-1M, wherein the molar ratio of zinc: lithium + nitrogen is 1:0.1%-10%; lithium : The molar ratio of nitrogen is 1:2-3. Then stir and dissolve at 60°C, add dropwise sodium hydroxide dissolved in 10ml methanol lye (molar ratio OH - :M x+ =1.8:1-2.5:1, M is zinc and lithium). Continue to stir at 60°C for 2h-4h to obtain a homogeneous transparent solution. Subsequently, after the solution is cooled, the treated ITO is spin-coated with a homogenizer and annealed at 300-350°C.

Embodiment 2

[0050] Taking zinc nitrate, lithium nitrate, urea, propanol, and ethanolamine as examples, the preparation method of Li-N / ZnO composite is introduced in detail below.

[0051] First, add appropriate amount of zinc nitrate, lithium nitrate and urea to 50ml of propanol to form a solution with a total concentration of 0.2M-1M, wherein the molar ratio of zinc: lithium + nitrogen is 1:0.1%-10%; lithium: nitrogen The molar ratio is 1:2-3. Then stir and dissolve at 60°C, dropwise add ethanolamine dissolved in 10ml methanol lye (molar ratio, ethanolamine: M x+ =1.8:1-2.5:1, M is zinc and lithium). Continue to stir at 60°C for 2h-4h to obtain a homogeneous transparent solution. Subsequently, after the solution is cooled, the treated ITO is spin-coated with a homogenizer and annealed at 300-350°C.

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Abstract

The invention belongs to the technical field of nanometer materials, and in particular relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material includes p-type ZnO nanoparticles and Li elements and N elements doped in the p-type ZnO nanoparticles. In this composite material, the acceptor energy level formed after Li-N doping is 1.25eV, and the increase of the acceptor energy level can reduce the band gap of ZnO from intrinsic 3.4eV to 2.2eV of Li-N / ZnO , so that the hole injection performance is increased, the hole carrier concentration of the composite material is greatly increased when the hole is transported, and the resistivity is greatly reduced, which has greater advantages than the single doping of a kind of acceptor. have better hole transport properties.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] ZnO is a direct bandgap n-type semiconductor material with a wide bandgap of 3.37eV and a low work function of 3.7eV. This band structure characteristic determines that ZnO can be a suitable electron transport layer material; at the same time, ZnO has a good Excellent electrical conductivity, high visible light transmittance, excellent water and oxygen stability, and mature preparation process make it more and more outstanding in the optoelectronic devices of solution process. [0003] The application of ZnO in the field of optoelectronics depends on the preparation of high-quality n-type and p-type thin films. At present, n-type ZnO with better electrical properties has been obtained by doping. However, intrinsic ZnO tends to generate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/155H10K2102/00H10K71/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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