Antimony selenide thin film with one-dimensional chain crystal structure and method for improving hole concentration of antimony selenide thin film

A technology of crystal structure and hole concentration, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of n-type doping and low hole carrier concentration

Active Publication Date: 2022-03-11
HUAZHONG UNIV OF SCI & TECH +1
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides a method for increasing the hole concentration of an antimony selenide thin film with a one-dimensional chain crystal structure. The technical problems of low hole carrier concentration and easy formation of n-type doping in antimony selenide thin film

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  • Antimony selenide thin film with one-dimensional chain crystal structure and method for improving hole concentration of antimony selenide thin film
  • Antimony selenide thin film with one-dimensional chain crystal structure and method for improving hole concentration of antimony selenide thin film
  • Antimony selenide thin film with one-dimensional chain crystal structure and method for improving hole concentration of antimony selenide thin film

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preparation example Construction

[0033] Such as figure 1 Shown is a flow chart of the steps of the method for improving the hole concentration of the antimony selenide film with a one-dimensional chain crystal structure, and the preparation method includes:

[0034] Step S100: Fully mix the dopant and antimony selenide in powder form to form a mixed powder, the dopant includes the element of the main group IV or the selenide containing the element of the main group IV.

[0035] In one embodiment, the dopant powder and the antimony selenide powder can be fully mixed in a certain molar ratio. Among them, the molar ratio of dopant powder and antimony selenide powder is not more than 1:100 to avoid the formation of alloy phase.

[0036] In an embodiment, the group IV element may include any one of carbon (C), silicon (Si), germanium (Ge), tin (Sn) and lead (Pb), preferably elemental Pb or compound PbSe.

[0037] Step S200: Sintering and grinding the mixed powder to obtain doped powder.

[0038] In one embodime...

Embodiment 1

[0054] In the first step, PbSe powder is mixed with Sb 2 Se 3 The powder is mixed evenly with a molar ratio of 1:100, put into a clean quartz tube, and a quartz column is filled at the sealing of the quartz tube, and the vacuum in the tube is lower than 10 -5 Pa, use a hydrogen-oxygen torch to vitrify the quartz tube by heating and stick to the inner quartz column to produce a sealed and isolated effect.

[0055] In the second step, put the sealed quartz tube into the muffle furnace, heat and fire it at 700°C for 10 hours, and take it out after it cools down naturally. Cut the quartz tube with a circular glass cutter, take out the sintered sample, put it into a clean mortar and grind it into powder.

[0056] In the third step, take 0.25 g of ground powder, put it into a quartz crucible placed on a ceramic boat, and place the ceramic boat on figure 1 The center position (high temperature zone) of the single temperature zone tube furnace shown, place the graphite rack carryin...

Embodiment 2

[0060] Combine PbSe powder with Sb 2 Se 3 The molar ratio of powder is adjusted to be 1:1000, and other processing parameters are with embodiment 1, and the prepared doped antimony selenide film is carried out Hall test, and the results are shown in Table 2 and Figure 6 shown. in, Figure 6 is the current-voltage curve of antimony selenide thin film.

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Abstract

The invention discloses a method for improving the hole concentration of an antimony selenide film with a one-dimensional chain crystal structure, which comprises the following steps: a dopant and antimony selenide are fully mixed in the form of powder to form mixed powder, and the dopant comprises elementary substance of the IV main group element or selenide containing the IV main group element; the mixed powder is sintered and then ground, and doped powder is obtained; the doped powder serves as an evaporation source, the doped antimony selenide thin film is obtained through a vapor phase transfer deposition method, and the antimony element in the doped antimony selenide thin film is replaced by the IV main group element in the dopant. The antimony selenide is doped by selecting the elementary substance of the IV main group element or the selenide containing the IV main group element as the dopant, and the experimental research shows that the hole carrier concentration of the antimony selenide thin film can be increased to 1 * 10 < 16 > cm <-3 > or above by using the dopant.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials and thin films, and more specifically relates to a one-dimensional chain crystal structure antimony selenide thin film and a method for increasing the hole concentration of the one-dimensional chain crystal structure antimony selenide thin film. Background technique [0002] Antimony selenide has a unique one-dimensional chain crystal structure, the [Sb 4 Se 6 ] n The chains interact in the way of van der Waals forces, showing strong anisotropy. The indirect bandgap width of antimony selenide is 1.03eV, the direct bandgap width is 1.17eV, and the theoretical efficiency can reach more than 30%; the absorption coefficient is large, and the absorption coefficient in the visible light band can reach 10 5 cm -1 , suitable for the development of thin film solar cells. [0003] Related research results show that the hole carrier concentration of antimony selenide film ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/24C30B29/46C30B23/00
CPCC23C14/0623C23C14/24C30B29/46C30B23/00
Inventor 唐江鲁帅成陈超高亮李康华卢岳
Owner HUAZHONG UNIV OF SCI & TECH
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