ITO (indium tin oxide) thin film and preparation method thereof

A film and substrate technology, applied in the field of ITO film and its preparation, can solve the problem of failing to effectively ensure the uniformity of the square resistance of the film, and achieve the effects of easy control of the film thickness, good uniformity and low square resistance

Active Publication Date: 2018-08-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are various methods for preparing ITO thin films in the prior art, including direct current or radio frequency magnetron sputtering, vacuum reaction evaporation, chemical vapor deposition, sol-gel method, etc. Although the square resistance and light transmittance of the prepared ITO thin films and other properties are good, but they can not effectively ensure the uniformity of the film resistance

Method used

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  • ITO (indium tin oxide) thin film and preparation method thereof
  • ITO (indium tin oxide) thin film and preparation method thereof
  • ITO (indium tin oxide) thin film and preparation method thereof

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preparation example Construction

[0024] The invention provides a kind of preparation method of preparing ITO film, specifically comprises the following steps:

[0025] Step S1: placing the substrate in the chamber, and setting the distance between the target and the substrate to be 56 mm to 65 mm;

[0026] Step S2: vacuumizing and heating the chamber so that the temperature of the substrate is 285°C-328°C;

[0027] Step S3: Introduce argon gas into the chamber, adjust the vacuum degree of the chamber to 3.9mTorr-5.1mTorr, and set the sputtering power to 68W-82W;

[0028] Step S4: continue to feed oxygen into the chamber, and adjust the flow ratio of the argon to the oxygen to be 33:1-38:1;

[0029] Step S5: forming an ITO thin film on the surface of the substrate by magnetron sputtering.

[0030] The preparation method of the ITO thin film of the present invention can ensure that sputtered particles with sufficient energy are sputtered out by setting appropriate target base distance, vacuum degree, gas flow...

Embodiment 1

[0042] The 6-inch glass substrate is cleaned. The specific process of the cleaning treatment is: ultrasonic cleaning with acetone, water, ethanol, and water for 15 minutes in sequence. After the cleaning treatment is completed, it is dried with a spin dryer and dried in a nitrogen oven.

[0043] The substrate is placed in the chamber, and the distance between the target and the substrate is set to 60 mm.

[0044] Vacuumize and heat the chamber so that the vacuum degree of the chamber is 5×10 -6 Torr, the temperature of the substrate is 300°C. During heating, the substrate was rotated at a speed of 6 r / min.

[0045] Introduce argon gas into the chamber, adjust the vacuum degree of the chamber to 4.1 mTorr, and keep it stable for 30 s, adjust the speed of the substrate to 6 r / min, and set the sputtering power to 80 W.

[0046] Continue to feed oxygen into the chamber, adjust the flow ratio of argon and oxygen to 34:1, and keep it stable for 15 seconds, then open the sputtering...

Embodiment 2

[0048] The 6-inch glass substrate is cleaned. The specific process of the cleaning treatment is: ultrasonic cleaning with acetone, water, ethanol, and water for 20 minutes in sequence. After the cleaning treatment is completed, it is dried with a spin dryer and dried in a nitrogen oven.

[0049] The substrate was placed in the chamber, and the distance between the target and the substrate was set at 56 mm.

[0050] Vacuumize and heat the chamber so that the vacuum degree of the chamber is 8×10 -6 Torr. The temperature of the substrate was 310°C. During heating, the substrate was rotated at a speed of 4 r / min.

[0051] Introduce argon gas into the chamber, and adjust the vacuum degree of the chamber to 5.1 mTorr, and keep it stable for 30 s. Adjust the speed of the substrate to 8r / min, and set the sputtering power to 70W.

[0052] Continue to feed oxygen into the chamber, adjust the flow ratio of argon and oxygen to 33:1, and keep it stable for 15 seconds, then open the spu...

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Abstract

The invention relates to a preparation method of ITO (indium tin oxide) thin film. The method comprises the following steps: placing a substrate in a chamber, and setting a distance between a target and the substrate to be 56-65mm; carrying out vacuumizing treatment and heating treatment on the chamber to enable the temperature of the substrate to be 285-328 DEG C; introducing argon gas into the chamber, adjusting the vacuum degree of the chamber to be 3.9-5.1mTorr, and setting sputtering power to be 68-82W; continuing to introduce oxygen gas into the chamber, and adjusting the flow ratio of the argon gas to the oxygen gas to be (33 to 1)-(38 to 1); forming the ITO thin film on a surface of the substrate by using a magnetron sputtering method. According to the preparation method of the ITOthin film, the prepared ITO thin film has good film thickness uniformity through adjustment and cooperation of various process parameters at relatively low sputtering power.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to an ITO thin film and a preparation method thereof. Background technique [0002] Indium Tin Oxide (Indium Tin Qxide) or Tin doped Indium Oxide (Tin doped Indium Oxide) film is an N-type semiconductor, referred to as ITO film. Due to the excellent transparency and conductivity of ITO thin film materials, it has developed rapidly in recent years, especially in thin film transistors (TFT), flat panel liquid crystal displays (LCD), transparent electrodes of solar cells and infrared radiation reflector coatings, trains and airplanes. It is widely used in glass defrosting, building curtain wall glass, etc. [0003] The thickness uniformity of the ITO thin film directly affects the function of the thin film device. For example, in the manufacture of MEMS devices, the thickness uniformity of the prepared ITO thin film directly affects the yield and device performance of the MEMS d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/0036C23C14/086C23C14/35
Inventor 阮勇尤政张晓琳
Owner TSINGHUA UNIV
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