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Carbon nanotube/copper high-current-carrying composite lead and preparation method thereof

A technology of carbon nanotubes and composite wires, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as difficulties in electroplating solutions and difficult carbon nanotube films to form a uniform seed layer. Achieve the effect of uniform composite phase and high conductivity

Inactive Publication Date: 2018-08-07
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Abstract
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  • Application Information

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Problems solved by technology

However, domestic researchers often fail to repeat the above results. The main reason is that it is difficult to form a uniform seed layer in the carbon nanotube film through the soaking process, and as the electroplating process proceeds, the carbon nanotube / copper composite phase inside The pores of the carbon nanotubes gradually decrease, making it difficult for the electroplating solution to enter the interior of the carbon nanotube / copper composite phase, so that electroplating mainly occurs on the surface

Method used

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  • Carbon nanotube/copper high-current-carrying composite lead and preparation method thereof
  • Carbon nanotube/copper high-current-carrying composite lead and preparation method thereof

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Embodiment 1

[0027] A specific embodiment of a method for preparing a carbon nanotube / copper high current-carrying composite wire is carried out according to the following steps:

[0028] In the first step, the carbon nanotube film produced by Suzhou Jiedi Nano Technology Co., Ltd. was cut into an area the size of a 2-inch flat-bottomed funnel, and the film was soaked in analytically pure acetone and heated at 50°C for 30 minutes before taking it out. Then soak it in analytically pure ethanol and heat it at 80°C for 30 minutes, take it out, and dry it in an oven at 75°C. The dried films were heated to 75 °C in 0.2 M dilute hydrochloric acid and kept for 60 min. Repeat the dilute hydrochloric acid process 3 times, take it out and put it in a vacuum oven to dry at 80°C for later use.

[0029] In the second step, the above-mentioned treated carbon nanotube film is placed in a 2-inch flat-bottomed funnel, and a small amount of ethanol is used to infiltrate the carbon nanotube film to keep the...

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Abstract

The invention relates to a carbon nanotube / copper high-current-carrying composite lead and a preparation method thereof. The preparation method mainly comprises a vacuum aid-based carbon nanotube filmelectroplating process, and the electroplating process is subdivided into a seed layer process and a conventional electroplating process. By utilizing the electroplating process, a uniform, compact and copper oxide-free carbon nanotube / copper composite material can be prepared, and the lead prepared based on the processing of the composite material has the advantages of good electrical conductivity and high current-carrying capability.

Description

technical field [0001] The invention relates to a carbon nanotube / copper high-current-carrying composite wire and a preparation method thereof, in particular to a nanocomposite wire composed of copper and carbon nanotubes with a large current-carrying capacity and a preparation method thereof, belonging to the field of nanomaterials. Background technique [0002] In recent decades, with the advancement of semiconductor industry process technology, the size of transistors has become smaller and smaller, and the number of transistors integrated on a chip per unit area has increased, resulting in higher and higher power requirements for chips. High-power chip power supply is currently mainly powered by copper wires. When the size of transistors decreases, the size of copper wires is also gradually reduced, which limits the continuous improvement of chip power. Foreign research institutions have proposed to prepare carbon nanotubes and copper into a uniform composite material, a...

Claims

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Application Information

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IPC IPC(8): C25D5/54C25D3/38C25D7/00H01L21/48H01L23/49
CPCC25D3/38C25D5/54C25D7/00H01L21/4885H01L23/49
Inventor 李儒李沫王旺平
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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