Plasma etching cleaning liquid, method for preparing same and application of plasma etching cleaning liquid

Abstract

The invention discloses plasma etching cleaning liquid, a method for preparing the same and application of the plasma etching cleaning liquid. The plasma etching cleaning liquid is prepared from raw materials comprising dispersing agents, hydroxylamine compounds and/or salt of the hydroxylamine compounds, organic solvents, corrosion inhibitors, organic amine, cyclodextrin-modified alkylene diol alkyl ether compounds and water. The plasma etching cleaning liquid, the method and the application have the advantages that the plasma etching cleaning liquid can be used for cleaning etched and ashedsemiconductor chips; good cleaning effects can be realized by the plasma etching cleaning liquid, the plasma etching cleaning liquid is nearly free of agglomeration in long-term placing and using procedures, is basically free of particle generation and is low in metal and nonmetal corrosion speed, and accordingly the plasma etching cleaning liquid and the method have excellent industrial application and popularization prospects.

Description

technical field [0001] The invention relates to a chemical reagent used in semiconductor manufacturing process, in particular to a plasma etching cleaning solution, its preparation method and application. Background technique [0002] In the production process of semiconductor integrated circuits, it is necessary to deposit and form a plurality of patterned semiconductor layers, conductive layers and insulating material layers. A photoresist is applied on an inorganic substrate, a pattern is formed on the photoresist by exposure and subsequent development, and then the formed pattern is used as a mask. Parts of the inorganic substrate not masked by the photoresist pattern are etched by exposure to metal etching plasma to remove exposed metal to form fine circuits. After patterning, deposition and etching, the photoresist layer must be completely removed before the next process step. [0003] Plasma ashing can remove the photoresist, but leaves ashed residue on the substrat...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the poor cleaning effect of the existing plasma etching cleaning solution, which is easy to corrode semiconductor devices, and is easy to agglomerate and produce particles during long-term placement and use, and the particle increase is large, which affects the cleaning effect and Defects in the conduction effect of semiconductor device circuits, and then provide a plasma etching cleaning solution, its preparation method and application

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