GaN-based power device with inverted structure of graphene heat dissipation layer and preparation method thereof
A gallium nitride-based, power device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of poor heat dissipation and low reliability of GaN power devices, and achieve improved heat dissipation performance and reliability performance, the effect of increasing the current density
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[0027] The invention relates to a flip-chip structure that uses graphene to reduce the thermal resistance of AlGaN / GaN high electron mobility transistors. In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0028] figure 1 A schematic diagram showing the epitaxial structure of a highly reliable AlGaN / GaN high electron mobility transistor according to an embodiment of the present invention, which includes the following parts:
[0029] [1]: Under the premise of knowing the conventional AlGaN / GaN device structure, the substrate material 1 of the chip is SiC, sapphire or Si material.
[0030] [2]: Under the premise of knowing the conventional AlGaN / GaN device structure, the GaN high-resistance buffer layer 2 of the epitaxial structure of the chip.
[0031] [3]: Under the premise of...
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