Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

GaN-based power device with inverted structure of graphene heat dissipation layer and preparation method thereof

A gallium nitride-based, power device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of poor heat dissipation and low reliability of GaN power devices, and achieve improved heat dissipation performance and reliability performance, the effect of increasing the current density

Active Publication Date: 2020-04-03
BEIJING HUATAN TECH CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problems of poor heat dissipation and low reliability of GaN power devices, and proposes a flip-chip structure using DLC ​​(diamond-like carbon) and graphene. The substrate uses DLC as an insulating heat dissipation material to improve the heat dissipation effect on the substrate. At the same time, The flip-chip structure realizes the connection between the epitaxial structure and the heat dissipation substrate, effectively improves the heat dissipation area, and homogenizes the distribution of the thermal field

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN-based power device with inverted structure of graphene heat dissipation layer and preparation method thereof
  • GaN-based power device with inverted structure of graphene heat dissipation layer and preparation method thereof
  • GaN-based power device with inverted structure of graphene heat dissipation layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The invention relates to a flip-chip structure that uses graphene to reduce the thermal resistance of AlGaN / GaN high electron mobility transistors. In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] figure 1 A schematic diagram showing the epitaxial structure of a highly reliable AlGaN / GaN high electron mobility transistor according to an embodiment of the present invention, which includes the following parts:

[0029] [1]: Under the premise of knowing the conventional AlGaN / GaN device structure, the substrate material 1 of the chip is SiC, sapphire or Si material.

[0030] [2]: Under the premise of knowing the conventional AlGaN / GaN device structure, the GaN high-resistance buffer layer 2 of the epitaxial structure of the chip.

[0031] [3]: Under the premise of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a GaN-based power device with an inverted structure having a graphene heat dissipation layer and a preparation method of the GaN-based power device. The GaN-based power devicecomprises, distributed from bottom to top, a substrate, an insulating medium layer, an electrode bonding pad, a GaN-based HEMT device and graphene material, wherein the electrode bonding pad comprisesa source electrode bonding pad, a drain electrode bonding pad and a gate electrode bonding pad; the GaN-based HEMT device comprises an epitaxial layer structure, a gate electrode, a source electrodeand a drain electrode; and an electrode of the GaN-based HEMT device is bonded with the substrate through the electrode bonding pad, so that an inverted packaging structure is realized. The graphene material is adopted as a heat dissipation material on a substrate material of the inverted GaN-based HEMT device. The HEMT device is connected with the heat dissipation film through the electrode bonding pad, and graphene is adopted as a heat dissipation layer on the HEMT substrate in the inverted structure. The heat dissipation efficiency of the device is improved, and the long-term reliability ofthe device is ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor microelectronics, and in particular relates to a flip-chip structure for improving HEMT thermal resistance of an AlGaN / GaN device through a graphene material. Background technique [0002] GaN materials have good thermal and electrical properties and chemical stability, such as wide band gap, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, etc., and are ideal for preparing high frequency, high temperature, high voltage, high power devices ideal material. [0003] AlGaN / GaN heterojunction has extremely strong piezoelectric polarization and spontaneous polarization effects, forming a high concentration of two-dimensional electron gas (2DEG) at the heterojunction interface, high electron mobility transistor based on AlGaN / GaN heterojunction (HEMT) have broad application prospects in power and radio frequency devices. With the increase o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L21/335H01L21/50H01L23/367H01L23/373
CPCH01L21/50H01L23/367H01L23/3738H01L29/66431H01L29/778
Inventor 梁世博
Owner BEIJING HUATAN TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products