A kind of donor material based on fluorine-containing indole and its preparation method and device

Abstract

The invention discloses a donor material based on fluorine-containing oxindole. Its general chemical structure is as follows: The organic photoelectric material has simple synthesis steps, easy purification, and definite structure, and is prepared with the organic donor material in the invention. The organic photovoltaic device does not require cumbersome post-treatment, and a thick-film device with high photoelectric conversion efficiency can be obtained only by simple solution spin coating, and the thickness range of the active layer can tolerate changes in the range of 120nm‑230nm. Its photoelectric conversion efficiency All can be kept between 5.3%-7.8%, and the highest photoelectric conversion rate can reach 7.80%, which has the potential of "roll-to-roll" preparation or printing to prepare large-area photovoltaic devices and good application value.

Description

technical field [0001] The application relates to the field of solar cell materials, in particular to a fluorine-containing indole-based donor material and its preparation method and device. Background technique [0002] Solar energy is currently one of the safest, greenest, and most environmentally friendly ideal alternative energy sources, and solar photovoltaic technology is also one of the important ways to solve the current fossil energy crisis. Compared with traditional inorganic silicon-based solar cells, organic solar cells have the advantages of light weight, low cost, solution processing, high mechanical flexibility, and can be made into large-area flexible devices. develop. Nevertheless, tedious device optimization processes (such as additives, thermal annealing, or solvent annealing, etc.) have resulted in extremely low batch-to-batch repeatability of high-efficiency devices due to the extreme difficulty in precisely controlling the morphology. In addition, the...

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Problems solved by technology

Nevertheless, tedious device optimization processes (such as additives, thermal annealing, or solvent annealing, etc.) have resulted in extremely low batch-to-batch repeatability of high-efficiency devices due to the extreme difficulty in precisely controlling the morphology.

In addition, the active layer of the current device is made thinner, and the tolerance of film thickness variation is very low. Generally, it is necessary to precisely control its thickness below 100nm to achieve high conversion efficiency, which greatly limits the process of device preparation. The application of "roll-to-roll" or inkjet printing technology, and the preparation of new donor materials are crucial to the improvement of the above phenomena

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