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Lattice mismatched multi-junction solar cell and manufacturing method thereof

A solar cell, lattice mismatch technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as lattice mismatch, surface roughness, wafer warpage, etc., to improve the effect of blocking dislocations, reduce Dislocation density, the effect of improving crystal quality

Active Publication Date: 2018-09-04
YANGZHOU CHANGELIGHT
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Problems solved by technology

[0006] In view of this, the present invention provides a lattice-mismatched multi-junction solar cell and its manufacturing method to solve the problem of wafer warpage caused by the insufficient dislocation blocking effect of the metamorphic buffer layer and the poor effect of releasing stress in the prior art. Problems with curvature and rough surfaces

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  • Lattice mismatched multi-junction solar cell and manufacturing method thereof
  • Lattice mismatched multi-junction solar cell and manufacturing method thereof
  • Lattice mismatched multi-junction solar cell and manufacturing method thereof

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Embodiment Construction

[0044] As mentioned in the background technology section, the metamorphic buffer layer in the prior art is formed by compositional transformation method, although the dislocations generated by the mismatch can be limited to the interface between two adjacent buffer layers and do not extend upward into the active cell. area, but this technique is not optimal for stress relief. The stress that has not been fully released will continue to release the stress by forming surface fluctuations of the epitaxial layer to cause surface roughness, and the residual stress in the epitaxial layer will also cause the wafer to warp. Moreover, the number of steps of the component-level modification method, the component-level variables of each layer, and the thickness of the steps need to be finely optimized, resulting in a narrow process window, and process fluctuations in production will lead to poor effects of blocking dislocations and releasing stress. .

[0045] However, the inventors fou...

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Abstract

The invention provides a lattice mismatched multi-junction solar cell and a manufacturing method thereof. The lattice mismatched multi-junction solar cell comprises a metamorphic buffer layer, whereinthe metamorphic buffer layer comprises at least two sub-layers, In components in each sub-layer are constant, the In components in the plurality of sub-layers gradually change, a layer of thin deltadoped layer is arranged between two adjacent sub-layers, the growth of the delta doped layer is interrupted due to the disconnection of an III metal source in the growing process, thus the majority ofdislocations are confined to an interface of the adjacent sub-layers in a compositional gradient layer, the layer of thin delta doped layer is inserted at the interface, thus part of dislocation which can extend upwards originally is blocked, further a dislocation blocking effect can be improved in a targeted manner, the dislocation density of an epitaxial layer is reduced, and the crystal quality of the material is improved. The lattice mismatched multi-junction solar cell provided by the invention combines the function of a compositional stepped changing method with the function of the delta doped layer, thereby improving the effect of blocking dislocations.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a lattice-mismatched multi-junction solar cell and a manufacturing method thereof. Background technique [0002] Solar cells convert solar energy directly into electricity and are the most efficient form of clean energy. III-V compound semiconductor solar cells have the highest conversion efficiency in the current material system, and have the advantages of good high temperature resistance and strong radiation resistance. They are recognized as a new generation of high-performance and long-life space main power supplies. / Ge lattice-matched triple-junction cells have been widely used in the aerospace field. [0003] But the traditional lattice-matched three-junction cell top cell GaInP and middle cell In 0.01 The current density of GaAs is much smaller than that of Ge in the bottom cell, and the solar spectrum is not fully utilized, which limits the improvement of...

Claims

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Application Information

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IPC IPC(8): H01L31/0725H01L31/0735H01L31/18
CPCH01L31/0725H01L31/0735H01L31/1844Y02E10/544Y02P70/50
Inventor 吴真龙姜伟韩效亚王玉汪洋
Owner YANGZHOU CHANGELIGHT
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