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A high configuration entropy thermoelectric compound and its design method and preparation method

A compound and configuration technology, applied in the field of high configuration entropy thermoelectric compounds and its design method and preparation, to achieve the effect of improving thermoelectric performance and thermal stability, low lattice thermal conductivity, and realizing synergistic regulation

Active Publication Date: 2020-01-14
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In summary, increasing the energy valley degeneracy or reducing the lattice thermal conductivity can effectively optimize the thermoelectric properties of the material, but the current improvement technology is often limited to one of the optimization strategies

Method used

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  • A high configuration entropy thermoelectric compound and its design method and preparation method
  • A high configuration entropy thermoelectric compound and its design method and preparation method
  • A high configuration entropy thermoelectric compound and its design method and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A design method for high configuration entropy thermoelectric compounds, comprising the steps of:

[0042] 1) Taking CdTe, the basic compound of diamond-like structure, as the research object, under the premise of satisfying electrical neutrality, that is, at the cation site (Cd 2+ ) to be filled with Cu + and In 3+ or Ag + and In 3+ , the anion site (Te 2- ) to fill in Se 2- and S 2- ;

[0043] 2) For the six elements of Cu, Cd, In, Te, Se, and S, calculate the ΔG (Gibbs free energy) of each substance from the first principle, including the compound CuCdInTeSeS formed by all elements, and the compound CuCdInTe formed by some elements 3 , CuCdInSe 3 , CuCdInS 3 、CuInTe 2 、CuInSe 2 、CuInS 2 、Cu 2 Te, Cu 2 Se, Cu 2 S, CdTe, CdSe, CdS, In 4 Te 3 、In 4 Se 3 、In 4 S 3 , InTe, In 2 Te 3 , InSe, In 2 Se 3 , InS, In 2 S 3 etc. Some elements form solid solutions (Cu 2 Te) 1-x (CdSe) x , (Cu 2 Te) 1-x (CdS) x , (Cu 2 Te) 1-x (In 2 Se 3 ) x , (C...

Embodiment 2

[0048] A class of Half-Heusler compound type high configuration entropy thermoelectric compounds, the stoichiometric formulas are ZrTiCoNiSnSb, ZrHfCoNiSnSb, TiHfCoNiSnSb, Zr 2 CoNiSnSb, ZrNbCo 2 SnSb, ZrNbCoNiSnSb, its preparation method comprises the steps:

[0049] 1) Using Zr powder, Ti powder, Hf powder, Co powder, Ni powder, Nb powder, Sn powder and Sb powder as raw materials, press ZrTiCoNiSnSb, ZrHfCoNiSnSb, TiHfCoNiSnSb, Zr respectively 2 CoNiSnSb, ZrNbCo 2 Stoichiometric ratios of SnSb, ZrNbCoNiSnSb high configuration entropy thermoelectric compounds are weighed, each compound uses a total of 5g of raw materials, which are sequentially numbered as a, b, c, d, e, f;

[0050] 2) Put each raw material in an agate mortar and mix evenly. The obtained mixed powder is used as a reactant, and the reactant is put into a steel mold, and the pressure of 6MPa is used on the tablet machine and the pressure is maintained for 5 minutes to obtain a Φ12mm Ingot;

[0051] 3) Vacuu...

Embodiment 3

[0056] A kind of high configuration entropy thermoelectric compound of salt rock phase structure compound type, the stoichiometric formula is respectively BiPbAgTeSeS, SbPbAgTeSeS, BiSnAgTeSeS, and its preparation method comprises the following steps:

[0057] 1) Using Bi block, Sb block, Pb grain, Sn grain, Ag wire, Te block, Se block, and S block as raw materials, weigh them according to the stoichiometric ratio of BiPbAgTeSeS, SbPbAgTeSeS, and BiSnAgTeSeS high configuration entropy thermoelectric compounds, The total amount of raw materials used for each compound is 5g, and they are numbered a, b, and c in sequence;

[0058] 2) Vacuum-seal each raw material in a quartz glass tube, then put the glass tube into a high-temperature melting furnace, raise the temperature to 1100 °C at a heating rate of 3-5 °C / min, keep it for 24 hours, and then cool it with the furnace;

[0059] 3) Grind the ingot obtained in step 2) into powder, weigh 4.6g and put it into a Φ16mm graphite mold ...

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Abstract

The present invention proposes a high configuration entropy thermoelectric compound and its design method and preparation method for the first time. Through the basic compound composed of anions and cations, "high entropy" is realized at the anion and cation positions at the same time, and the compound is constructed and prepared. Both the anion site and the cation site are a new system of high configuration entropy materials with multiple principal elements. This material system can realize the coordinated transport of electricity and heat, thereby greatly improving the thermoelectric performance, etc., providing a new idea and way for the performance optimization of thermoelectric materials, and has broad application prospects.

Description

technical field [0001] The invention belongs to the field of thermoelectric semiconductor materials, and in particular relates to a high configuration entropy thermoelectric compound and its design method and preparation method. Background technique [0002] Thermoelectric conversion technology uses thermoelectric materials to directly convert heat energy and electric energy. It has the characteristics of small system size, high reliability, no emission of pollutants, wide applicable temperature range, and effective use of low-density energy. It is used in industrial waste heat and automobile exhaust waste heat. It has a wide range of applications in the fields of recycling, high-precision temperature control and special power supply technology. [0003] The conversion efficiency of thermoelectric materials is determined by the dimensionless thermoelectric figure of merit ZT (ZT=α 2 σT / (κ E +κ L ), where α is the Seebeck coefficient, σ is the electrical conductivity, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34H10N10/852H10N10/01
CPCH10N10/852H10N10/01
Inventor 唐新峰杨东旺鄢永高柳伟苏贤礼
Owner WUHAN UNIV OF TECH
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