A method for improving the reliability of ceramic copper-clad laminates with nano-silver paste
A technology of ceramic copper clad laminate and nano-silver paste, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc. The effect of improving cycle ability, reducing residual stress, and high reliability
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Embodiment 1
[0048] The process steps of the preparation method for high-voltage and high-power high-reliability ceramic copper-clad laminates in this embodiment are as follows:
[0049] (1) Ultrasonic cleaning the ceramic substrate and metal copper sheet in an organic solvent for 20-30 minutes to remove the oily dirt adhering to the surface of the ceramic substrate, and then drying at 100-200°C for 1-5 hours to make the surface of the ceramic substrate The organic matter and water are fully volatilized, and the surface of the ceramic substrate is bombarded with ions to make the surface of the ceramic substrate clean at the atomic level. The thickness of the silicon nitride ceramic substrate is 0.3mm, and the thickness of the metal copper sheet is 0.15mm.
[0050] (2) Deposit a Ti metal layer and a Cu metal layer on the surface of the aluminum nitride ceramic substrate cleaned in step (1) by vacuum magnetron sputtering or ion plating, and electroplate a silver layer to obtain a pre-metalliz...
Embodiment 2
[0055] The process steps of the preparation method for high-voltage and high-power high-reliability ceramic copper-clad laminates in this embodiment are as follows:
[0056] (1) Ultrasonic cleaning the ceramic substrate and metal copper sheet in an organic solvent for 20-30 minutes to remove the oily dirt adhering to the surface of the ceramic substrate, and then drying at 100-200°C for 1-5 hours to make the surface of the ceramic substrate The organic matter and water are fully volatilized, and the surface of the ceramic substrate is bombarded with ions to make the surface of the ceramic substrate clean at the atomic level. The thickness of the silicon nitride ceramic substrate is 0.3mm, and the thickness of the metal copper sheet is 0.15mm.
[0057] (2) Deposit a Ti metal layer and a Cu metal layer on the surface of the aluminum nitride ceramic substrate cleaned in step (1) by vacuum magnetron sputtering or ion plating, and electroplate a silver layer to obtain a pre-metalliz...
Embodiment 3
[0062] The process steps of the preparation method for high-voltage and high-power high-reliability ceramic copper-clad laminates in this embodiment are as follows:
[0063] (1) Ultrasonic cleaning the ceramic substrate and metal copper sheet in an organic solvent for 20-30 minutes to remove the oily dirt adhering to the surface of the ceramic substrate, and then drying at 100-200°C for 1-5 hours to make the surface of the ceramic substrate The organic matter and water are fully volatilized, and the surface of the ceramic substrate is bombarded with ions to make the surface of the ceramic substrate clean at the atomic level. The thickness of the silicon nitride ceramic substrate is 0.3mm, and the thickness of the metal copper sheet is 0.15mm.
[0064] (2) Deposit a Ti metal layer and a Cu metal layer on the surface of the aluminum nitride ceramic substrate cleaned in step (1) by vacuum magnetron sputtering or ion plating, and electroplate a silver layer to obtain a pre-metalliz...
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Abstract
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