Method for electroless deposition of copper on aluminum oxide film

A technology of electroless deposition and aluminum oxide, applied in the field of electroless deposition of copper on aluminum oxide film, can solve the problems of high cost, high pollution, complicated process, etc., and achieve the effect of simple method and good conductive effect.

Inactive Publication Date: 2018-09-14
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for electroless deposition of copper on aluminum oxide film, which solves the problems of high cost, complicated process and high pollution of copper deposition method in the prior art

Method used

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  • Method for electroless deposition of copper on aluminum oxide film
  • Method for electroless deposition of copper on aluminum oxide film
  • Method for electroless deposition of copper on aluminum oxide film

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Embodiment 1

[0031] A method for electrolessly depositing copper on an aluminum oxide film, the specific steps are as follows:

[0032] Step 1, under the dark condition, the aluminum oxide film is immersed in the ammonium chloropalladate ((NH4) that mass concentration is 6g / l 2 PdCl 4 ) after soaking in the aqueous solution for 17 minutes; take out the aluminum oxide film, clamp the aluminum oxide film with tweezers and constantly shake and rinse it in deionized water for 5 minutes, and set aside;

[0033] Step 2. Weigh sodium hydroxide, anhydrous copper sulfate and potassium tartrate according to the mass ratio of 1:1:2.3, mix well and add deionized water with 18% of the total mass of sodium hydroxide, anhydrous copper sulfate and potassium tartrate to make Dissolve fully, obtain solution A, stand-by;

[0034] Step 3, the solution A obtained in step 2 is mixed uniformly with the formaldehyde (HCHO) aqueous solution with a volume concentration of 9.5ml / l by a volume ratio of 1:1 to obtai...

Embodiment 2

[0037] A method for electrolessly depositing copper on an aluminum oxide film, the specific steps are as follows:

[0038] Step 1, under the dark condition, the aluminum oxide film is immersed in the ammonium chloropalladate ((NH4) that mass concentration is 6.2g / l 2 PdCl 4 ) after soaking in the aqueous solution for 16.8 minutes; take out the aluminum oxide film, clamp the aluminum oxide film with tweezers and continuously shake and rinse it in deionized water for 6 minutes, and set aside;

[0039] Step 2. Weigh sodium hydroxide, anhydrous copper sulfate and potassium tartrate according to the mass ratio of 1:1:2.4, mix well and add deionized water with 18.5% of the total mass of sodium hydroxide, anhydrous copper sulfate and potassium tartrate to make Dissolve fully, obtain solution A, stand-by;

[0040] Step 3. Mix the solution A obtained in step 2 with the formaldehyde (HCHO) aqueous solution with a volume concentration of 9.6ml / l by a volume ratio of 1:1 to obtain an el...

Embodiment 3

[0043] A method for electrolessly depositing copper on an aluminum oxide film, the specific steps are as follows:

[0044] Step 1, under the dark condition, the aluminum oxide film is immersed in the ammonium chloropalladate ((NH ) that mass concentration is 6.5g / l 2 PdCl 4 ) after soaking in the aqueous solution for 16.5min; take out the aluminum oxide film, clamp the aluminum oxide film with tweezers and continuously shake and rinse it in deionized water for 5min, and set aside;

[0045] Step 2. Weigh sodium hydroxide, anhydrous copper sulfate and potassium tartrate according to the mass ratio of 1:1:2.5, mix well and add deionized water with 18.8% of the total mass of sodium hydroxide, anhydrous copper sulfate and potassium tartrate to make Dissolve fully, obtain solution A, stand-by;

[0046] Step 3, the solution A obtained in step 2 is mixed uniformly with the formaldehyde (HCHO) aqueous solution of 10ml / l by the volume ratio of 1:1, obtains the electroless deposition s...

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Abstract

The invention discloses a method for electroless deposition of copper on an aluminum oxide film. The method includes steps: soaking an aluminum oxide film in ammonium chloropalladate ((NH4)2PdCl4) aqueous solution for 15min-17min; taking out, and completely rinsing with deionized water; soaking the aluminum oxide film in Cu electroless deposition solution for 10min-13min, taking out, rinsing withdeionized water and blowing to dry, so that electroless deposition of copper on the aluminum oxide film is completed. By the method for electroless deposition of copper on the aluminum oxide film, problems of high cost and process complexity in an existing copper deposition preparation process are solved; reaction is carried out at the room temperature, simplicity in operation, short time, recyclability of raw materials and environmental friendliness are realized, and applicability of a copper coating is improved.

Description

technical field [0001] The invention belongs to the technical field of electronic device preparation methods, and relates to a method for electrolessly depositing copper on an aluminum oxide film. Background technique [0002] Copper (Cu) has low resistance and good electromigration resistance, and is a good connection material, which has wide application in the semiconductor industry. Nano-aluminum oxide film has the characteristics of biocompatibility, high mechanical strength, wear resistance, corrosion resistance, high dielectric constant, heat resistance and high light transmittance, and has been widely used in food packaging, electronic Devices, biomedical implants and mechanical coatings and many other industries. Copper deposition technology mainly adopts physical vapor deposition (PVD), chemical vapor deposition (CVD), chemical deposition and electrodeposition (ECD). However, these traditional methods are complicated to operate, high in cost and polluting. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/18C23C18/40
Inventor 方长青蒲梦园周星雷婉青
Owner XIAN UNIV OF TECH
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