Hidden cutting LED chip and manufacturing method thereof

Abstract

The present invention discloses a hidden cutting LED chip and a manufacturing method thereof. The manufacturing method comprises the steps of: providing a substrate consisting of a first surface and asecond surface; forming a luminescence structure at the first surface of the substrate; employing a hidden laser cutting method to form scratches at the second surface of the substrate; performing splitting of the substrate and the luminescence structure along the scratches to form a single LED chip; and performing cleaning of the side walls of the single LED chip by employing acid liquor, and removing the residue at the side walls of the single LED chip. The hidden cutting LED chip and the manufacturing method thereof effectively solve the electric leakage problem of a LED chip without cutting channels, improve the chip yield and are convenient for large-scale mass production.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a stealth-cut LED chip and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor device that uses carrier recombination to release energy to form light. The formal LED chip has low power consumption, pure chromaticity, long life, small size, fast response time, energy saving and environmental protection. and many other advantages. [0003] Traditional chip cutting methods such as diamond scribing and grinding wheel sawing have gradually become outdated due to their low efficiency and low yield, and cannot meet the needs of modern production. At present, laser cutting is gradually replacing traditional cutting and becoming the current mainstream cutting method. Laser cutting is divided into surface cutting and internal cutting, that is, invisible cutting. Laser scribing is a new type of cut...

AI Technical Summary

Problems solved by technology

This method is prone to two adverse consequences: 1) a large number of fragments appear, the fragmentation rate is high, and the output rate is low; 2) it cannot be split, or the split is poor, and the yield rate is low

[0007] Chinese patent document CN103000507B discloses a manufacturing method for improving brightness and yield of medium and large-sized chips. It specifically discloses a cutting process that adopts invisible cutting on the back and has a cutting depth greater than 1 / 2 of the thickness of the chip, which solves the problem of oblique cracks. Low yield rate, low brightness and other technical problems

If this method is applied to sapphire substrates, it will consume a lot of diamond cutters, the efficiency is low, and appearance problems such as edge chipping, oblique cracks, and twin crystals will easily occur after cutting.

Images