A light-emitting diode epitaxial wafer and its preparation method

Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a buffering layer, an N-type semiconductor layer, an active layer, an electronic blocking layer and a P-type semiconductor layer, wherein the buffering layer, the N-type semiconductor layer, the active layer, the electronic blocking layer and the P-type semiconductor layer are successively laminated on the substrate. The electronic blocking layer comprises multiple successively laminated composite structures. Each composite structure comprises first sub-layers and second sub-layers, wherein the first sub-layers and the second sub-layers are successively laminated. The first sub-layers are made of boron nitride aluminum and the second sub-layers are made of indium gallium nitride. According to the invention, by use of the indium gallium nitride, the energy level of the electronic blocking layer isimproved; the energy level of a guide band is increased; the energy level of a valence band is decreased; the width of a forbidden band between the guide band and the valence band is increased; the blocking effects on the electronics are enhanced; injection of holes is increased, so under the condition that electron transition to the P-type semiconductor layer is effectively blocked, injection ofholes in the active layer is facilitated; the quantity of holes injected into the active layer is increased; and light emitting efficiency of an LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has the advantages of energy saving and environmental protection, high reliability, long service life, etc., so it is currently receiving more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. Existing LED epitaxial wafers include substrate, buffer layer, N-type semiconductor layer, active layer, electron blocking layer and P-type semiconductor layer, buffer layer, N-type semiconductor layer, active layer, electron blocking layer and P-type semiconductor layer Layers are stacked sequentially on the substrate. The substrate is used to provide a growth surface for epitaxial materials, the buffer la...

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and a preparation method thereof, which can solve the problem of being unable to effectively block the transition of electrons to the P-type semiconductor layer or limit the hole injection of the P-type semiconductor layer into the active layer and electrons to perform radiative recombination and light emission.

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