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Silicon cored square ingot manufacturing process capable of preventing pot sticking and ingot breakage

A manufacturing process and silicon core technology, applied in the field of silicon core square ingot manufacturing process, can solve problems such as silicon ingots are prone to cracking, and achieve the effects of resisting thermal convection impact, inhibiting erosion, and preventing shedding

Inactive Publication Date: 2018-11-06
JIANGYIN DONGSHENG NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above reaction between silica and molten silicon causes the silicon to adhere to the crucible, and due to the difference in thermal expansion coefficient between the two materials, silica and silicon, the ingot is prone to cracking as it cools

Method used

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  • Silicon cored square ingot manufacturing process capable of preventing pot sticking and ingot breakage

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Embodiment Construction

[0030] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0031] A silicon core square ingot manufacturing process of an anti-sticking pot broken ingot in this embodiment, the process includes the following steps:

[0032] Step 1. Crucible spraying

[0033] Mix water and silicon nitride powder at a mass ratio of 1:1 to prepare the first silicon nitride slurry, theoretically calculate the liquid level in the crucible after the input silicon material is melted, and use a brush to remove the first silicon nitride slurry. The silicon slurry is evenly coated at the height of the liquid level, and after coating for 2 to 3 times, it is dried to form the first silicon nitride coating;

[0034] The thickness of the first silicon nitride coating is 90-100 μm; the upper and lower width of the first silicon nitride coating is 10 cm, and the height of the center line of the first silicon nitride coating from the...

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Abstract

The invention relates to a silicon cored square ingot manufacturing process capable of preventing pot sticking and ingot breakage. The process comprises the following steps: step I, spraying onto a crucible; step II, preparing a material and then loading the well prepared silicon material into the strip-shaped crucible; step III, carrying out vacuum-pumping operation to a furnace body before ingotheating, and continuously introducing argon gas into the furnace body for protection in heating and crystal growing processes, wherein the argon gas admission velocity in silicon material heating andmelting process is 30L / min, and the argon gas admission velocity in the crystal growing process is 20 L / min; step IV, annealing; step 5, discharging and demoulding. According to the silicon cored square ingot manufacturing process provided by the invention, a liquid level position of the molten silicon material inside the crucible is coated with a first silicon nitride coating through a hairbrush, the compactness of the coating is improved greatly by compared with that of a heat spraying way, silicon material melting heat convection impact can be effectively resisted, and coating falling offwhich causes silicon ingot sticking pot and ingot breakage can be effectively prevented.

Description

technical field [0001] The invention relates to a silicon core square ingot manufacturing process for breaking an ingot in an anti-stick pot, and belongs to the technical field of polysilicon production. Background technique [0002] In recent years, with the increasing maturity of solar power generation technology, solar cells have been widely used in many fields such as industry, agriculture and aerospace. At present, according to the different materials used, solar cells can be divided into: silicon solar cells, compound thin film solar cells and polymer multilayer modified electrode solar cells, organic solar cells and nanocrystalline solar cells. Among them, the development of silicon solar cells is the most mature and occupies a dominant position in the application. Crystalline silicon solar cells are further divided into monocrystalline silicon solar cells and polycrystalline silicon solar cells. Compared with monocrystalline silicon solar cells, the preparation pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 殷硕宰刘根刘德胜郁宇丰
Owner JIANGYIN DONGSHENG NEW ENERGY
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