A kind of n-doped SIC nanobelt high sensitive pressure sensor and preparation method thereof
A technology of pressure sensor and nanobelt, which is applied in the field of nanomaterial preparation to achieve the effects of excellent high temperature resistance, low defect density and large aspect ratio
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Embodiment 1
[0043] Polysilazane was selected as the initial raw material, and it was thermally cross-linked and cured at 260°C for 30 minutes under the protection of Ar atmosphere. The solid obtained by solidification is put into a nylon resin ball mill jar, and the ball mill is pulverized into powder. Weigh 300 mg of polysilazane and 150 mg of dicyandiamide powder and mix them uniformly and place them at the bottom of the graphite crucible. A carbon fiber cloth of 5 x 5 cm (length x width) was cut as a substrate and placed on top of a graphite crucible, and placed in an atmosphere sintering furnace heated by graphite resistance. The atmosphere furnace is first evacuated to 10 -4 Pa, and then filled with Ar gas (99.99% purity), until the pressure is one atmosphere (~0.11Mpa), after which the pressure is constant.
[0044] First, rapidly raise the temperature from room temperature to 1020°C at a rate of 30°C / min and keep warm for 10 minutes, then raise the temperature to 1400°C at a rate...
Embodiment 2
[0047] The only difference with Example 1 is that 300mg of polysilazane and 100mg of dicyandiamide are added to the bottom of the graphite crucible during the preparation of the N-doped SiC nanobelt of the functional unit in the sensor of this example, and the others are the same as in Example 1. I won't repeat it here. The N-doped SiC nanoribbon SEM picture that this embodiment makes is Figure 11 with Figure 12 As shown, it is shown that the prepared nanobelt has good flexibility, the width is several hundred nanometers, the thickness is tens of nanometers, and the length reaches tens of microns. The generation of nanobelts is not as regular as in Example 1, so the embodiment Nanoribbons are used in sensors whose sensitivity is not as good as the examples.
Embodiment 3
[0049] The only difference from Example 1 is that 300mg of polysilazane and 200mg of dicyandiamide are added to the bottom of the graphite crucible in this example. Others are the same as in Example 1 and will not be repeated here. The N-doped SiC nanoribbon prepared in this embodiment has good flexibility and a large aspect ratio, and the generation of the nanoribbon is not as regular as in Example 1. Therefore, the nanoribbon of this embodiment is used for sensors, and its sensitivity is not as high as that of Example 1. Good example.
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