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Room-temperature A-site doping method for APbX3 perovskite quantum dots

A quantum dot and perovskite technology, applied in the field of A-site doping method at room temperature, can solve the problems of poor quality of quantum dots, difficult high-performance light-emitting devices, and no effective improvement, and achieve the effect of improving device performance.

Inactive Publication Date: 2018-11-09
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most strategies for improving LED efficiency are surface modification, interface regulation, and doping on the basis of high-temperature quantum dots. However, the quality of quantum dots at low temperature or room temperature is poor, and there is no effective improvement method. Difficult to apply to high-performance light-emitting devices

Method used

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  • Room-temperature A-site doping method for APbX3 perovskite quantum dots
  • Room-temperature A-site doping method for APbX3 perovskite quantum dots
  • Room-temperature A-site doping method for APbX3 perovskite quantum dots

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Effect test

Embodiment 1

[0026] 1), 1 mmol of lead bromide and 2.2 mmol of tetraoctyl ammonium bromide were dissolved in 31 mL of toluene, and stirred in air at room temperature until completely dissolved to obtain a lead precursor;

[0027] 2) Dissolving 0.3mmol of cesium carbonate and 0.045mmol of formamidine acetate in 3mL of oleic acid to form a Cs+15% FA doped A-site precursor; FA is formamidine;

[0028] 3), inject the Cs+15%FA precursor into the lead precursor, react for 5min, and obtain (Cs 0.75 FA 0.15 )PbBr 3 Quantum dot stock solution;

[0029] 4), the quantum dot stock solution obtained above is purified by centrifugation to obtain (Cs 0.75 FA 0.15 )PbBr 3 quantum dots.

[0030] Application: Spin-coat PEDOT:PSS, Poly-TPD and (Cs 0.75 FA 0.15 )PbBr 3 Quantum dots, and then sequentially evaporate TPBi, LiF and Al electrodes in a thermal evaporation chamber to obtain a QLED device.

Embodiment 2

[0032] Using the same process as in Example 1, the difference is that the amount of formamidine acetate in step 2) of Example 1 is changed to 0, and other conditions remain the same to obtain undoped CsPbBr 3 QDs.

Embodiment 3

[0034] Using the same process as in Example 1, the difference is that the amount of formamidine acetate in step 2) of Example 1 is changed to 0.0225mmol, and other conditions remain the same to obtain FA doping concentration of 7.5% (Cs 0.75 FA 0.15 )PbBr 3 QDs.

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Abstract

The invention discloses a room-temperature A-site doping method for APbX3 perovskite quantum dots. The method comprises the following steps: 1) dissolving lead bromide and an organic ligand in toluene, performing stirring to dissolve the lead bromide and the organic ligand in order to obtain a lead precursor, and dissolving cesium carbonate, and formamidine acetate, methylamine acetate or guanidine carbonate in a long alkyl chain organic acid to obtain a doped A-site precursor, wherein the doped A-site precursor includes a doped A-site precursor salt; 2) injecting the doped A-site precursor obtained in step 1) into the lead precursor obtained in the step 1), and carrying out a full reaction to obtain a quantum dot stock solution; and 3), centrifuging and purifying the quantum dot stock solution obtained in step 2) to obtain A-site doped APbX3 perovskite quantum dots. The room-temperature A-site doping method for APbX3 perovskite quantum dots improves the performances of perovskite QLEDdevices by doping the A-site Cs matrix of the CsPbX3 with formamidine, methylamine or guanidine. The fluorescence quantum yield PLQY of the doped APbX3 quantum dots reaches 90% or above, and the efficiency (EQE) of the QLEDs of the doped APbX3 quantum dots reaches 10 or more.

Description

technical field [0001] The present invention relates to an APbX 3 Room temperature A-site doping of perovskite quantum dots. Background technique [0002] Halide perovskite quantum dots are considered as "ideal" LED materials because of their high luminous efficiency, tunable band gap, high carrier mobility, and low cost, and have very broad prospects. However, the efficiency of LED is still at a low level and needs to be further improved and enhanced. At present, most strategies for improving LED efficiency are surface modification, interface regulation, and doping on the basis of high-temperature quantum dots. However, the quality of quantum dots at low temperature or room temperature is poor, and there is no effective improvement method. Difficult to apply to high-performance light-emitting devices. Therefore, with low temperature requirements and easy operation, CsPbBr is suitable for high-performance light-emitting device applications 3 The improvement process of qu...

Claims

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Application Information

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IPC IPC(8): C07C257/12C07C211/04C07C209/68C07C279/02C07C277/00C09K11/06C09K11/66B82Y20/00B82Y30/00B82Y40/00H01L51/50
CPCC09K11/06C09K11/665B82Y20/00B82Y30/00B82Y40/00C07C211/04C07C257/12C07C279/02H10K50/11
Inventor 宋继中许蕾梦李建海李金航薛洁
Owner NANJING UNIV OF SCI & TECH
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