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Composite middle layer for performing diffusion bonding on silicon carbide ceramics and bonding process thereof

A composite intermediate layer and silicon carbide ceramic technology, applied in welding equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of joint micro-cracks, large residual stress, mismatching thermal expansion coefficient, etc., achieve high joint connection strength, reduce Effect of thermal expansion coefficient and reduction of residual stress

Active Publication Date: 2018-11-20
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the mismatch between the thermal expansion coefficient of the connecting layer material and the silicon carbide material, the residual stress is too large, resulting in micro-cracks in the joint, which seriously affects the joint strength and reliability of the joint.

Method used

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  • Composite middle layer for performing diffusion bonding on silicon carbide ceramics and bonding process thereof
  • Composite middle layer for performing diffusion bonding on silicon carbide ceramics and bonding process thereof
  • Composite middle layer for performing diffusion bonding on silicon carbide ceramics and bonding process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In this embodiment, the bonding process of the composite intermediate layer diffusion bonding silicon carbide ceramics is as follows:

[0040] 1. Preparation of composite interlayer powder

[0041] With 59.5wt.% titanium hydride powder (TiH 2 ), 24.5wt.% silicon powder (Si), 13.9wt.% graphite powder (C) and 2.1wt.% aluminum powder (Al) are poured into the agate grinding bowl after being mixed as raw materials, with absolute alcohol as the grinding medium, Grind for 1 hour until completely mixed, and then dry in a vacuum oven at 60°C for 6 hours to obtain a composite intermediate layer powder;

[0042] 2. Preparation before welding

[0043] Cylindrical SiC ceramic materials were cut with an internal circle cutting machine Cut into SiC ceramic discs with a thickness of 3 mm, and use 3.5 μm and 1 μm diamond suspension polishing liquid to polish the surface to be welded of the SiC ceramic discs in turn, put the polished SiC ceramic discs into alcohol solution and ultras...

Embodiment 2

[0051] In this embodiment, the bonding process of the composite intermediate layer diffusion bonding silicon carbide ceramics is as follows:

[0052] 1. Preparation of composite interlayer powder

[0053] With 59.5wt.% titanium hydride powder (TiH 2 ), 24.5wt.% silicon powder (Si), 13.9wt.% graphite powder (C) and 2.1wt.% aluminum powder (Al) are poured into the agate grinding bowl after being mixed as raw materials, with absolute alcohol as the grinding medium, Grind for 2 hours until completely mixed, and then dry in a vacuum oven at 60°C for 6 hours to obtain a composite intermediate layer powder;

[0054] 2. Preparation before welding

[0055] Cylindrical SiC ceramic materials were cut with an internal circle cutting machine Cut into SiC ceramic discs with a thickness of 3 mm, and use 3.5 μm and 1 μm diamond suspension polishing liquid to polish the surface to be welded of the SiC ceramic discs in turn, put the polished SiC ceramic discs into alcohol solution and ultra...

Embodiment 3

[0063] In this embodiment, the bonding process of the composite intermediate layer diffusion bonding silicon carbide ceramics is as follows:

[0064] 1. Preparation of composite interlayer powder

[0065] With 59.5wt.% titanium hydride powder (TiH 2 ), 24.5wt.% silicon powder (Si), 13.9wt.% graphite powder (C) and 2.1wt.% aluminum powder (Al) are poured into the agate grinding bowl after being mixed as raw materials, with absolute alcohol as the grinding medium, Grind for 3 hours until completely mixed, and then dry in a vacuum oven at 60°C for 6 hours to obtain a composite intermediate layer powder;

[0066] 2. Preparation before welding

[0067] Cylindrical SiC ceramic materials were cut with an internal circle cutting machine Cut into SiC ceramic discs with a thickness of 3 mm, and use 3.5 μm and 1 μm diamond suspension polishing liquid to polish the surface to be welded of the SiC ceramic discs in turn, put the polished SiC ceramic discs into alcohol solution and ultra...

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Abstract

The invention discloses a composite middle layer for performing diffusion bonding on silicon carbide ceramics and a bonding process thereof. The composite middle layer for performing diffusion bondingon the silicon carbide ceramics is prepared from the following components in percentage by weight: 55 to 65 percent of high-purity titanium hydride powder, 20 to 25 percent of high-purity silicon powder (Si), 12 to 17 percent of high-purity graphite powder (C), and 1 to 3 percent of high-purity aluminum powder (Al). According to the composite middle layer disclosed by the invention, by utilizinga spark plasma sintering technology (SPS), a silicon carbide (SiC) joint, of which the thickness of a bonding layer is 20 micrometers to 100 micrometers, is prepared under a vacuum condition. A bonding layer material mainly consists of a titanium silicon carbide (Ti3SiC2), the silicon carbide (SiC) and titanium carbide (TiC). Through changing the proportions of the raw materials and process parameters of sintering, the highest shearing strength at a room temperature reaches 135.8MPa, and the hardness of the composite material of the bonding layer can reach 28.1GPa, exceeding the hardness of SiC base materials; and therefore, the composite middle layer disclosed by the invention has a higher practical value.

Description

technical field [0001] The invention relates to a composite intermediate layer used for diffusion bonding silicon carbide ceramics and a connection process thereof, which belongs to the field of connection of ceramic materials. Background technique [0002] With the advancement of science and technology and the development of modern industry, the requirements for the required structural materials are becoming more and more stringent. In some extreme high temperature, high corrosion, high wear, strong radiation and other environments, traditional metal materials can no longer To meet the needs of use. In this case, some advanced ceramic materials stand out with their excellent properties such as high temperature stability, corrosion resistance, wear resistance, and radiation resistance, and the demand for ceramics and their composite structural parts is increasing. Due to the constraints of technology and equipment, it is difficult to directly prepare large-sized or complex-...

Claims

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Application Information

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IPC IPC(8): B23K20/00B23K20/24B23K20/22
CPCB23K20/026B23K20/22B23K20/24
Inventor 钟志宏王志泉孙博文杨安康宋奎晶朱志雄
Owner HEFEI UNIV OF TECH
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