Formation method of fin field effect transistor structure

Abstract

The invention discloses a method for forming a Fin Field Effect Transistor structure, comprising the following steps: Step S01: providing a semiconductor substrate, and sequentially depositing a dielectric layer and a hard mask layer on the semiconductor substrate; Step S02: Deposit a silicon dioxide layer on the hard mask layer; step S03: pattern the silicon dioxide layer to form a first fin; step S04: use hydrogen as a reducing agent to reduce the silicon dioxide material in the first fin to Elemental silicon to form the second fin; step S05: remove the hard mask layer and dielectric layer material in the area other than the area below the second fin; step S06: form the second fin across the top and sidewall of the second fin part of the gate structure. The invention avoids direct etching of silicon material, reduces the difficulty of etching process, can precisely control the width and height of fins, and is compatible with conventional silicon-based VLSI manufacturing technology, and has the advantages of simplicity, convenience and short cycle time The characteristics reduce the process cost.

Description

technical field [0001] The present invention relates to the technical field of integrated circuit manufacturing, and more particularly, to a method for forming a Fin Field Effect Transistor structure. Background technique [0002] With the continuous development of semiconductor technology, traditional planar devices have been difficult to meet people's demand for high-performance devices. [0003] A Fin Field-Effect Transistor (Fin Field-Effect Transistor, FinFET) is a three-dimensional device, including fins vertically formed on a substrate and stacked gates intersecting the fins. This design can greatly improve circuit control and reduce leakage, and can also greatly shorten the gate length of the transistor. [0004] see figure 1 , figure 1 It is a schematic diagram of a three-dimensional structure of an existing fin field effect transistor. Such as figure 1 As shown, the fin field effect transistor structure includes: a semiconductor substrate 10 at the bottom laye...

AI Technical Summary

Problems solved by technology

However, the height and width of the fins formed by this method are not well controlled; and the shape uniformity of the edges and sidewalls of the formed fins is poor

This will shift the threshold voltage of the FinFET and affect the stability of the FinFET

Images