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Organic n-type semiconductor polymer material based on naphthalimide-selenophene and its preparation method and application

A naphthalimide and semiconductor technology, applied in organic n-type semiconductor polymer materials and its preparation, and in the application field of perovskite solar cells, can solve the problems of complex interface layer, unstable light and oxygen, and high cost. Achieve high mobility, excellent thermal stability, and appropriate energy levels

Active Publication Date: 2020-09-25
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

In these devices, adopting a bilayer structure as the interfacial layer between perovskite and Ag is relatively complicated, as demonstrated by C 60 (40nm) and BCP (10nm) The 50nm thick interface layer also needs to be prepared by high vacuum evaporation, the cost is high
PCBM or fullerene derivatives are expensive and unstable to light and oxygen for a long time

Method used

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  • Organic n-type semiconductor polymer material based on naphthalimide-selenophene and its preparation method and application
  • Organic n-type semiconductor polymer material based on naphthalimide-selenophene and its preparation method and application
  • Organic n-type semiconductor polymer material based on naphthalimide-selenophene and its preparation method and application

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Embodiment

[0086] The present invention can be better understood from the following examples. However, those skilled in the art will readily understand that the specific material ratios, process conditions and results described in the examples are only used to illustrate the present invention, and should not and will not limit the present invention described in detail in the claims .

[0087] The embodiment of the present invention utilizes an organic conjugated polymer n-type semiconductor material composed of a planar rigid naphthalimide as a strong electron-withdrawing unit and a highly conductive selenophene derivative as an electron-donor unit and its preparation method, such as figure 1 shown. The structures of these polymers and their intermediates were characterized by NMR and mass spectrometry, their thermal stability was analyzed by thermogravimetry, their electrochemical properties were characterized by cyclic voltammetry and their energy levels were calculated, and they were...

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Abstract

The invention discloses an organic n-type semiconductor polymer material based on naphthalimide-selenophene and its preparation method and application. Based on the long-chain naphthalimide as an electron-pulling unit, selenophene and its derivative diselenide The invention relates to an n-type organic conjugated polymer semiconductor material with electron-donating units and a preparation method thereof, and the application of the polymer as a cathode interface modification layer material in a perovskite solar cell. The n-type conjugated polymer semiconductor based on naphthalimide and selenophene derivatives disclosed by the present invention has the advantages of solution processing, high electron mobility, excellent thermal stability, and appropriate energy level, and is an ideal perovskite Solar cell cathode interface modification material.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to an organic n-type semiconducting polymer material based on naphthalimide-selenophene, its preparation method and application, and the use of this type of polymer as a cathode modification layer in a perovskite solar cell Applications. Background technique [0002] Solar energy is an inexhaustible clean and green energy. In recent years, with the attention of countries all over the world on energy issues, solar cells have become a research hotspot in this field. Compared with traditional semiconductor solar cells, perovskite solar cells have outstanding advantages such as low cost, high efficiency, simple manufacturing process, and can be prepared into flexible devices, and have broad development and application prospects. 1-3 . Perovskite solar cells (PSCs) have undergone tremendous development since 2013, with photoelectric conversion efficiencies (PCEs) higher t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G61/12H01L51/42H01L51/46
CPCC08G61/12C08G61/123C08G2261/1412C08G2261/3241C08G2261/3225C08G2261/18C08G2261/414C08G2261/592C08G2261/91H10K85/113H10K30/15Y02E10/549
Inventor 闫伟博王子龙辛颢郭世赣
Owner NANJING UNIV OF POSTS & TELECOMM
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