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Single crystal alumina low-temperature brazing method

A sapphire and brazing technology, applied in the direction of welding medium, welding equipment, welding/cutting medium/material, etc., can solve the lack of research on wetting behavior, interfacial reaction connection strength, insufficient interfacial reaction at the interface, and reduce brazing Solve problems such as the performance of welded joints to achieve the effects of increasing mechanical properties, reducing residual stress, and reducing thermal damage

Active Publication Date: 2018-11-30
HUAQIAO UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there are many studies on high-temperature brazing technology and principles, thermal damage to materials due to high temperature during brazing is still inevitable, which greatly reduces the performance of brazed joints
In addition, due to the low heating temperature of mechanically assisted low-temperature brazing, sufficient interfacial reaction cannot occur at the interface, which also makes the connection strength of low-temperature brazing relatively low
However, the research on wetting behavior, interface reaction and connection strength in the temperature range of 280-600°C is relatively scarce, and these studies have very important guiding significance for exploring a process with high connection strength and low damage.

Method used

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Examples

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Embodiment 1

[0023] 1) Take 0.6 grams of 8-12 μm titanium powder (purity 99.9%), 19.4 grams of 300 mesh (about 48 μm) Sn-3Ag-0.5Cu powder (purity 99.9%) and mix them into a ceramic ball mill jar, introduce 1.6 ml of acetone, put Put in ceramic grinding balls with a total weight of 300 grams, and the diameter of the ceramic balls is 3 to 10 mm. Close the lid and place it in a ball mill with a speed of 250rpm for 8 hours, then take it out and dry it to obtain a Sn-Ag-Cu-Ti alloy powder, wherein the content of Ti is 3wt%, the content of Ag is 2.91wt%, and the content of Cu is 0.485wt%. , the rest are Sn;

[0024] 2) Brazing sapphire with the Sn-Ag-Cu-Ti alloy powder obtained in step 1) as solder: ultrasonically clean the sapphire substrate with acetone and dry it; then spread Sn-Ag-Cu on the surface of the polished sapphire substrate -Ti alloy powder; then another polished sapphire substrate is placed on the sprinkled Sn-Ag-Cu-Ti alloy powder to form a sapphire / solder / sapphire "sandwich" str...

Embodiment 2

[0026] 1) Take 0.2 grams of 8-12 μm titanium powder (purity 99.9%), 19.8 grams of 300 mesh (about 48 μm) Sn-3Ag-0.5Cu powder (purity 99.9%) and mix them into a ceramic ball mill jar, introduce 1.6 ml of acetone, put Put in ceramic grinding balls with a total weight of 300 grams, and the diameter of the ceramic balls is 3 to 10 mm. Close the lid and place it in a ball mill with a speed of 250rpm for 8 hours, then take it out and dry it to obtain a Sn-Ag-Cu-Ti alloy powder, wherein the content of Ti is 1wt%, the content of Ag is 2.97wt%, and the content of Cu is 0.495wt%. , the rest are Sn;

[0027] 2) Brazing sapphire with the Sn-Ag-Cu-Ti alloy powder obtained in step 1) as solder: ultrasonically clean the sapphire substrate with acetone and dry it; then spread Sn-Ag-Cu on the surface of the polished sapphire substrate -Ti alloy powder; then another polished sapphire substrate is placed on the sprinkled Sn-Ag-Cu-Ti alloy powder to form a sapphire / solder / sapphire "sandwich" str...

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Abstract

The invention discloses a single crystal alumina low-temperature brazing method, and belongs to the technical field of ceramic material connection. According to the method, low-temperature brazing connection of single crystal alumina is achieved through the characteristics that the melting point of tin is low and activity of titanium is high, and thermal damage during the brazing process is reduced; and thermal stress generated during the brazing process is effectively released through the characteristic that tin is soft, and residual stress of interface connection parts of single crystal alumina and brazing filler metal is reduced. The method is achieved through the following steps of: firstly preparing Sn-Ag-Cu-Ti alloy powder; carrying out ultrasonic cleaning on a single crystal aluminamatrix through acetone, and drying the single crystal alumina matrix; then, spraying the Sn-Ag-Cu-Ti alloy powder on the surface of the polished single crystal alumina matrix; then, placing another polished single crystal alumina matrix on the alloy powder; and finally, putting the entire single crystal alumina / brazing filler metal / single crystal alumina sandwich structure into a quartz tube, carrying out vacuumizing till the vacuum degree is 5* 10 (<->4) Pa or below, moving the quartz tube into a tube furnace, heating for 30 min at the temperature of 450 DEG C to 650 DEG C, taking out the quartz tube in a vacuumized state, and cooling the quartz tube to the room temperature.

Description

technical field [0001] The invention relates to the technical field of ceramic material connection, in particular to a method for brazing sapphire at low temperature. Background technique [0002] Sapphire (single crystal alumina) and alumina ceramics (polycrystalline alumina) are widely used in electronic packaging, aerospace and other occasions due to their unique crystal structure and excellent physical and chemical properties. In order to meet various requirements in actual use, sapphire and other similar ceramics usually appear in the form of ceramic / metal or ceramic / ceramic connectors. The traditional ceramic brazing process in the industry is mainly divided into two steps. First, the Mo-Mn alloy is used to pre-metallize the ceramic connection surface at a temperature above 1200 ° C, and then the brazing connection step is completed. This high-temperature step-by-step brazing process will inevitably cause thermal stress damage to the sapphire and the substrate, and th...

Claims

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Application Information

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IPC IPC(8): B23K1/00B23K1/20B23K1/19B23K35/40B23K35/26
CPCB23K1/00B23K1/19B23K1/20B23K35/262B23K35/40
Inventor 冯魁元廖信江穆德魁
Owner HUAQIAO UNIVERSITY
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