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Graphite crucible and manufacturing method thereof

A technology of graphite crucible and manufacturing method, applied in chemical instruments and methods, non-woven fabrics, textiles and papermaking, etc., can solve the problems of high expansion coefficient of graphite crucible, high mismatch of quartz crucible, easy occurrence of cracks, etc. Superior performance, low expansion coefficient, and the effect of improving mechanical strength

Active Publication Date: 2018-12-14
ZING SEMICON CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a graphite crucible and its manufacturing method, which is used to solve the problem of excessive mismatch between the graphite crucible and the quartz crucible in the prior art due to its high expansion coefficient. Prone to problems such as cracks

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  • Graphite crucible and manufacturing method thereof
  • Graphite crucible and manufacturing method thereof
  • Graphite crucible and manufacturing method thereof

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Embodiment Construction

[0057] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0058] see Figure 2 to Figure 7 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, so that only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the...

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Abstract

The invention provides a graphite crucible and a manufacturing method thereof. The manufacturing method comprises the following steps: 1) providing a crucible mold; 2) providing perhydropolysilazane fibers, performing opening, cross lapping and needling binding to make a perhydropolysilazane fiber felt, performing ammonia pyrolysis, and sintering to obtain the silicon nitride fiber felt; 3) coating an adhesive containing graphite raw materials in the crucible mold, and spreading the silicon nitride fiber felt on the adhesive; 4) repeating the step 3); 5) performing mold separation to obtain acrucible template after curing; 6) performing carbonizing and graphitizing treatment, thereby obtaining the graphite crucible. The continuous silicon nitride fiber felt is prepared by dry spinning andneedling binding, and the silicon nitride fiber felt has the advantages of being low in expansion coefficient, excellent in heat-conducting property, excellent in mechanical property and the like. The continuous silicon nitride fiber felt is set in the graphite crucible wall, the deformation extent of the graphite crucible in the cooling process due to heat expansion can be greatly reduced, and cracks of the graphite crucible are avoided.

Description

technical field [0001] The invention relates to semiconductor manufacturing equipment and a manufacturing method, in particular to a graphite crucible and a manufacturing method thereof. Background technique [0002] The pulling method is a method of synthesizing crystals invented by Czochralski in 1917, so it is also called "Czochralski method". It is a method of growing crystals from molten raw materials. The principle of the pulling method is to use temperature field control to make the molten raw material grow into crystals. The raw materials for crystal growth are heated in a crucible to form a melt, and the temperature distribution (temperature field) in the growth furnace is controlled so that the temperature of the melt and the seed crystal / crystal has a certain temperature gradient. At this time, the seed crystal rod After the seed crystal is in contact with the melt, the surface melts, and the seed crystal rod is pulled and rotated, and the supercooled melt will c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/532C04B35/622D01F6/76D01F9/10D04H1/4209D04H1/46C30B15/10C30B29/06
CPCC04B35/806C04B35/522C04B35/532C04B2235/524C30B15/10C30B29/06D01F6/76D01F9/10D04H1/4209D04H1/46
Inventor 王燕
Owner ZING SEMICON CORP