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Quantum dot ink and quantum dot light emitting diode preparation method

A quantum dot light-emitting and quantum dot technology, which is applied in the manufacturing and application of inks, semiconductor/solid-state devices, etc., can solve the problems of inconsistent thickness of quantum dot light-emitting layer, inconsistent thickness of quantum dot film, uneven dispersion of quantum dots, etc. Transmissibility, improved yield and production efficiency, and uniform thickness

Inactive Publication Date: 2018-12-18
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a quantum dot ink, which aims to solve the problem that the viscosity of the dispersion solvent in the quantum dot ink is too small and the boiling point is too low or the viscosity is too high, which leads to uneven dispersion of quantum dots, which leads to inconsistent film thickness and poor uniformity of quantum dots. technical problem
[0006] Another object of the present invention is to provide a method for preparing a quantum dot light-emitting diode to solve the existing technical problems of inconsistent thickness and poor uniformity of the quantum dot light-emitting layer formed by inkjet printing

Method used

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  • Quantum dot ink and quantum dot light emitting diode preparation method
  • Quantum dot ink and quantum dot light emitting diode preparation method
  • Quantum dot ink and quantum dot light emitting diode preparation method

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preparation example Construction

[0041] (2) Preparation method of quantum dot light-emitting diodes

[0042] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode. The preparation method of the quantum dot light-emitting diode includes the steps of treating the anode substrate, preparing a hole injection and / or hole transport layer on the anode, forming a quantum dot light-emitting layer, and forming electrons on the quantum dot light-emitting layer. The step of transporting layer and / or electron injecting layer and the step of preparing cathode, etc. Except for the preparation steps of the quantum dot light-emitting layer, other steps can be prepared according to the conventional steps of quantum dot light-emitting diodes. Wherein the quantum dot luminescent layer is prepared according to the steps of the quantum dot luminescent layer as follows:

[0043] A. Print the quantum dot ink layer with the quantum dot ink by inkjet printi...

Embodiment 1

[0052] This embodiment provides a quantum dot ink, which includes 5wt% CdSe / ZnS quantum dots, 5wt% decahydronaphthalene solvent, and 90wt% diethylsulfoxide solvent; wherein, decahydronaphthalene and diethylsulfoxide form a mixed solvent , Various solvents are purified by corresponding methods to remove water and oxygen to a purity greater than 99.9%.

[0053] Its configuration method:

[0054] Add the following components to the vessel, with stirring, in the following order: 5 wt% oleylamine-stabilized red CdSe / ZnS quantum dots, 5 wt% decahydronaphthalene solvent, 90 wt% diethylsulfoxide solvent and stir the mixture for 30 minutes to obtain the quantum dot ink composition.

[0055] Utilize the quantum dot ink provided in this embodiment 1 to print into a 20×30um red quantum dot layer with a resolution of 200×200ppi by an inkjet printer, and then heat it to 120° C. on a hot plate under a vacuum of 1×10 -6 Volatilize and dry under Torr for 30 minutes to obtain a monochromatic ...

Embodiment 2

[0057] The present embodiment provides a kind of quantum dot ink, and it packs 13wt% CdZnSe / CdZnS quantum dot and 80%wt o-dimethoxybenzene, 7%wt tetramethylene sulfoxide solvent; Wherein, o-dimethoxybenzene , Tetramethylene sulfoxide solvent to form a mixed solvent, and all solvents are purified by corresponding methods to remove water and oxygen until the purity is greater than 99.9%.

[0058] Its configuration method:

[0059] Add the following components to the vessel, with stirring, in the following order: 13 wt% oleylamine-stabilized green CdZnSe / CdZnS, 80% wt o-dimethoxybenzene, 7% wt tetramethylene sulfoxide solvent The mixture was stirred for 30 minutes to obtain a quantum dot ink composition.

[0060] Use the quantum dot ink provided in Example 2 to print a green quantum dot layer of 20 × 30um with a resolution of 200 × 200ppi through an inkjet printer, and then heat it on a hot plate to 180°C and volatilize and dry it for 30 minutes under nitrogen flow to obtain a s...

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Abstract

The invention provides a quantum dot ink and a quantum dot light emitting diode preparation method. The quantum dot ink comprises at least a quantum dot material and at least a sulfoxide-based organicsolvent, wherein the molecular structure formula of the sulfoxide-based organic solvent is represented by a structural general formula I or / and II defined in the specification, the R<1> and the R<2>contained in the structural general formula I are the same or different, and are any one group selected from C1-30 aliphatic and aromatic groups, or one of the R<1> and the R<2> is H, the other of theR<1> and the R<2> is any one group selected from C1-30 aliphatic and aromatic groups, and the R<3> contained in the structural general formula II is any one group selected from C1-30 aliphatic and aromatic groups. The quantum dot light emitting diode preparation method comprises: preparing a quantum dot light emitting layer by using the quantum dot ink through an ink jet printing method.

Description

technical field [0001] The invention belongs to the technical field of quantum dot light-emitting diodes, and in particular relates to a preparation method of quantum dot ink and quantum dot light-emitting diodes. Background technique [0002] Quantum dots are composed of a limited number of atoms, and the three dimensions are all on the order of nanometers. Quantum dots are generally spherical or quasi-spherical, and are nanoparticles made of semiconductor materials (usually composed of IIB-VIA or IIIA-VA elements) with a stable diameter of 2-20 nm. Quantum dots are aggregates of atoms and molecules on the nanoscale. As a novel semiconductor nanomaterial, quantum dots have many unique nanoscale properties. Can emit fluorescence when stimulated. In recent years, quantum dot (QD) luminescent materials have played a great role in LED lighting, liquid crystal display and other fields. Quantum dots replace traditional phosphors, effectively improving the color gamut of LED an...

Claims

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Application Information

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IPC IPC(8): C09D11/36C09D11/38C09D11/50H01L51/56H01L51/50
CPCC09D11/36C09D11/38C09D11/50H10K71/135H10K50/115H10K71/00
Inventor 李雪
Owner TCL CORPORATION
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