A kind of preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

Abstract

The invention discloses a preparation method of a light emitting diode epitaxial wafer and a light emitting diode epitaxial wafer thereof, belonging to the field of semiconductor technology. A manufacture method comprises sequentially grow a buffer layer, an N-type semiconductor layer and a stress release lay on a substrate by a chemical vapor deposition technique; Gamma-ray irradiation is appliedto the surface of the stress-releasing layer to reduce the resistivity of the stress-releasing layer. An active layer and a P-type semiconductor layer were grown on the stress-relief layer by chemical vapor deposition. By irradiating the surface of the stress relief layer with gamma rays, each component of the stress-releasing layer is uniformly doped in the stress-releasing layer, the uniformityand effectiveness of element doping in the stress release layer are improved, Ensuring the consistency and uniformity of the epitaxial wafer growth quality, reducing and releasing the defects and stresses caused by lattice mismatch between sapphire and GaN, and improving the crystal quality of the active layer are conducive to increasing the radiation recombination luminescence in the active layer, and ultimately improving the luminescence efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has attracted wide attention due to its advantages of energy saving, environmental protection, high reliability, and long service life. For civil lighting, luminous efficiency and service life are the main criteria, so increasing the luminous efficiency of LEDs and improving the antistatic ability of LEDs is particularly critical for the wide application of LEDs. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, a...

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Problems solved by technology

[0006] The embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer, which can solve the stress and defects caused by the lattice mismatch between sapphire and gallium nitride in the prior art that affect the electrons and electrons in the active layer. Hole radiation recombination light emission, resulting in low luminous efficiency of LED

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