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Preparation method of polyaniline/ruthenium oxide/tin dioxide composite electrode material

A composite electrode, polyaniline technology, used in hybrid capacitor electrodes, electrolytic organic material coating, hybrid/electric double layer capacitor manufacturing and other directions, can solve the problems of low charge and discharge rate, low cycle times, etc. The effect of improving the specific capacitance value and excellent cyclic charge-discharge performance

Active Publication Date: 2018-12-25
GUIZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when a single polyaniline is prepared as an electrode material, there are two technical defects: on the one hand, the charge and discharge rate is low; on the other hand, compared with carbon materials and most transition metal oxides, the single polyaniline electrode material has low cycle times

Method used

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  • Preparation method of polyaniline/ruthenium oxide/tin dioxide composite electrode material

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preparation example Construction

[0026] The invention provides a polyaniline / RuO 2 / SnO 2 The preparation method of composite electrode material comprises the following steps:

[0027] SnO was deposited by magnetron sputtering 2 The target material is deposited on the surface of the tantalum substrate, forming SnO on the surface of the tantalum substrate 2 retouching layer;

[0028] RuCl 3 solution, porous silica molecular sieve and NH 4 HCO 3 Mix, carry out the synthesis reaction, and activate the resulting product to obtain RuO 2 Nanoparticles;

[0029] The RuO 2 Nanoparticles are mixed with conductive carbon black, polyvinylidene fluoride and nitrogen methylpyrrolidone, and the resulting mixed slurry is coated on the SnO 2 layer surface and form RuO after solidification 2 middle active layer;

[0030] In the RuO 2 Electrodeposition of polyaniline on the surface of the intermediate active layer yields polyaniline / RuO 2 / SnO 2 Composite electrode material.

[0031] The present invention adopts...

Embodiment 1

[0040] Select high-purity tantalum foil for wire cutting, so that its diameter is 50 mm; use metallographic sandpaper with a particle size of 500 mesh to polish the tantalum substrate until the oxide layer on the surface of the tantalum substrate is completely removed; place the polished tantalum substrate in an ultrasonic cleaner, Use acetone and mixed lye (ingredients: 5g L -1 NaOH, 10g·L -1 Na 2 CO 3 , 20g·L -1 Na 3 PO 4 and 15g·L -1 Na 2 SiO 3 ) for degreasing for 5 minutes; then use an atmospheric plasma cleaning agent to perform ultra-clean cleaning on the surface of the degreased tantalum substrate, and keep the distance between the tantalum substrate and the plasma flame nozzle at 3 cm, and the cleaning time is 5 minutes;

[0041] The treated tantalum substrate and SnO 2 The sputtering targets were respectively installed in the corresponding fixtures in the magnetron sputtering chamber, and vacuumed to 0.5×10 -3 Pa, followed by injection of N 2 Make the pres...

Embodiment 2

[0048] Select high-purity tantalum foil for wire cutting, so that the diameter is 70mm; use metallographic sandpaper with a particle size of 600 mesh to polish the tantalum substrate until the oxide layer on the surface of the tantalum substrate is completely removed; place the polished tantalum substrate in an ultrasonic cleaner, Use acetone and mixed lye (ingredients: 5g L -1 NaOH, 10g·L -1 Na 2 CO 3 , 20g·L -1 Na 3 PO 4 and 15g·L -1 Na 2 SiO 3 ) for degreasing for 5 minutes; then use an atmospheric plasma cleaning agent to perform ultra-clean cleaning on the surface of the degreased tantalum substrate, and keep the distance between the tantalum substrate and the plasma flame nozzle at 3 cm, and the cleaning time is 5 minutes;

[0049] The treated tantalum substrate and SnO 2 The sputtering targets were respectively installed in the corresponding fixtures in the magnetron sputtering chamber, and vacuumed to 0.5×10 -3 Pa, followed by injection of N 2 Make the press...

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Abstract

The invention provides a preparation method of a polyaniline / RuO2 / SnO2 composite electrode material, wherein a SnO2 thin film is sputtered on a tantalum substrate by a magnetron sputtering method to form a SnO2 layer; RuO2 nanoparticles with a porous structure and uniform pore size distribution (10-15nm) are prepared by a template method; the polyaniline / RuO2 / SnO2 composite electrode material witha multilayer structure is finally prepared by embedding polyaniline into an RuO2 nanoparticle substrate by electrodeposition. The specific capacitance of the composite electrode material can reach 680-702 F.g<-1>. An electrochemical capacitor with the electrode material has excellent cycling charge-discharge performance.

Description

technical field [0001] The invention relates to the technical field of electrochemical capacitors, in particular to a polyaniline / RuO 2 / SnO 2 Preparation method of composite electrode material. Background technique [0002] The electrode materials that make up the electrochemical capacitor and the electrolyte perform highly reversible Faraday pseudocapacitive behavior to store charges, and the electrode materials are key components in energy storage devices. [0003] Compared with other types of energy storage devices, RuO 2 Electrochemical capacitors made of electrode materials have high specific capacitance and excellent power density, and are used as auxiliary power sources in related fields such as national defense, military industry, and aerospace. However, when this type of electrochemical capacitor is charged and discharged cyclically, bubbles are often precipitated from the electrode substrate and impact the electrode active layer, causing the electrode active la...

Claims

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Application Information

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IPC IPC(8): H01G11/86H01G11/24H01G11/26H01G11/30H01G11/46H01G11/48B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01G11/24H01G11/26H01G11/30H01G11/46H01G11/48H01G11/86C08G73/0266C08K3/04C08K2003/221C09D5/448C23C14/086C23C14/35C25D9/02C25D13/20C25D13/22C09D7/61C09D7/67C25B11/095H01G11/32Y02E60/13C23C22/82
Inventor 李祥罗咏梅路坊海黎应芬
Owner GUIZHOU INST OF TECH
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