A kind of preparation method of polyaniline/ruthenium oxide/tin dioxide composite electrode material

A composite electrode and polyaniline technology, which is applied in hybrid capacitor electrodes, electrolytic organic material coatings, hybrid/electric double layer capacitor manufacturing, etc., can solve the problems of low cycle times and low charge and discharge rates, and achieve increased specific capacitance value, Effect of increasing specific surface area and improving electrode stability

Active Publication Date: 2020-07-31
GUIZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when a single polyaniline is prepared as an electrode material, there are two technical defects: on the one hand, the charge and discharge rate is low; on the other hand, compared with carbon materials and most transition metal oxides, the single polyaniline electrode material has low cycle times

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  • A kind of preparation method of polyaniline/ruthenium oxide/tin dioxide composite electrode material

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preparation example Construction

[0026] The invention provides a polyaniline / RuO 2 / SnO 2 The preparation method of composite electrode material includes the following steps:

[0027] SnO 2 The target is deposited on the surface of the tantalum substrate, and SnO is formed on the surface of the tantalum substrate 2 Modification layer

[0028] Will RuCl 3 Solution, porous silicon molecular sieve and NH 4 HCO 3 Mix, carry out the synthesis reaction, and activate the resultant to obtain RuO 2 Nanoparticles;

[0029] Put the RuO 2 Nano particles are mixed with conductive carbon black, polyvinylidene tetrafluoroethylene and nitromethylpyrrolidone, and the resulting mixed slurry is applied to the SnO 2 The surface of the layer and solidify to form RuO 2 Middle active layer

[0030] In the RuO 2 Electrodeposition of polyaniline on the surface of the middle active layer to obtain polyaniline / RuO 2 / SnO 2 Composite electrode material.

[0031] The invention adopts magnetron sputtering method to mix SnO 2 The target is deposited...

Embodiment 1

[0040] Select high-purity tantalum foil for wire cutting to make the diameter 50mm; use 500-mesh metallographic sandpaper to polish the tantalum substrate until the oxide layer on the surface of the tantalum substrate is completely removed; place the polished tantalum substrate in an ultrasonic cleaner, Use acetone and mixed lye separately (component: 5g·L -1 NaOH, 10g·L -1 Na 2 CO 3 , 20g·L -1 Na 3 PO 4 And 15g·L -1 Na 2 SiO 3 ) Degrease for 5 minutes; then use atmospheric plasma cleaning agent to super-clean clean the surface of the degreasing tantalum substrate, and keep the distance between the tantalum substrate and the plasma flame nozzle 3cm, and the cleaning time is 5 minutes;

[0041] The treated tantalum substrate and SnO 2 The sputtering targets are respectively installed in the corresponding fixtures in the magnetron sputtering chamber, and evacuated to 0.5×10 -3 Pa, then inject N 2 Make the pressure of the sputtering chamber 5Pa with the gas, then turn on the sputterin...

Embodiment 2

[0048] Select high-purity tantalum foil for wire cutting to make the diameter 70mm; use 600-mesh metallographic sandpaper to polish the tantalum substrate until the oxide layer on the surface of the tantalum substrate is completely removed; place the polished tantalum substrate in an ultrasonic cleaner, Use acetone and mixed lye separately (component: 5g·L -1 NaOH, 10g·L -1 Na 2 CO 3 , 20g·L -1 Na 3 PO 4 And 15g·L -1 Na 2 SiO 3 ) Degrease for 5 minutes; then use atmospheric plasma cleaning agent to super-clean clean the surface of the degreasing tantalum substrate, and keep the distance between the tantalum substrate and the plasma flame nozzle 3cm, and the cleaning time is 5 minutes;

[0049] The treated tantalum substrate and SnO 2 The sputtering targets are respectively installed in the corresponding fixtures in the magnetron sputtering chamber, and evacuated to 0.5×10 -3 Pa, then inject N 2 Make the pressure of the sputtering chamber 5Pa with the gas, then turn on the sputterin...

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Abstract

The present invention provides a method for preparing a polyaniline / RuO2 / SnO2 composite electrode material, including: sputtering a SnO2 film onto a tantalum substrate by a magnetron sputtering method, to form a SnO2 layer; preparing porous-structured RuO2 nanoparticles with a uniform pore size distribution (10-15 nm) by a template method; and embedding polyaniline into the RuO2 nanoparticle matrix by a electrodeposition method, to finally obtain a multilayer-structured polyaniline / RuO2 / SnO2 composite electrode material with a specific capacitance value of 680-702 F·g−1 and an excellent cycling charge-discharge performance after it is assembled into an electrochemical capacitor.

Description

Technical field [0001] The invention relates to the technical field of electrochemical capacitors, in particular to a polyaniline / RuO 2 / SnO 2 Preparation method of composite electrode material. Background technique [0002] The electrode material and the electrolyte that constitute the electrochemical capacitor perform highly reversible Faraday pseudocapacitance behavior to store charge, and the electrode material is the key component in the energy storage device. [0003] Compared with other types of energy storage devices, RuO 2 Electrochemical capacitors composed of electrode materials have high specific capacitance and excellent power density, and are used as auxiliary power sources in national defense, military, aerospace and other related fields. However, when this type of electrochemical capacitor undergoes cyclic charging and discharging, the electrode substrate often precipitates bubbles that impact the electrode active layer, causing the electrode active layer to fall of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/86H01G11/24H01G11/26H01G11/30H01G11/46H01G11/48B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01G11/24H01G11/26H01G11/30H01G11/46H01G11/48H01G11/86C08G73/0266C08K3/04C08K2003/221C09D5/448C23C14/086C23C14/35C25D9/02C25D13/20C25D13/22C09D7/61C09D7/67C25B11/095H01G11/32Y02E60/13C23C22/82
Inventor 李祥罗咏梅路坊海黎应芬
Owner GUIZHOU INST OF TECH
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