A preparation method of an anti-PID double-sided PERC solar cell

A solar cell, double-sided technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex POE packaging process, different packaging materials, incompatibility, etc., achieve strong resistance to impurity diffusion and water vapor penetration, and low cost , the effect of improving efficiency

Inactive Publication Date: 2019-01-04
NINGBO ULICA SOLAR SCIENCE & TECHNOLOGY CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the existing technology only includes aluminum oxide film and silicon nitride film on the back, it does not have anti-PID function, so POE material needs to be used for packaging, but in actual production, due to the front EVA packaging film packaging process and the back POE The packaging process is different, and

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be further described below through specific embodiments, but the present invention is not limited to the following specific embodiments.

[0019] A method for preparing an anti-PID double-sided PERC solar cell comprises the following steps.

[0020] (1) Wafer cutting and material preparation;

[0021] (2) Remove the damaged layer;

[0022] (3), cashmere;

[0023] (4), diffusion knot;

[0024] (5), edge etching and cleaning;

[0025] (6) Deposit silicon nitride film on the front side;

[0026] (7) Aluminum oxide film is deposited on the back;

[0027] (8) Deposit silicon oxynitride film on the back;

[0028] (9) Deposit silicon nitride film on the back;

[0029] (10) Laser slotting on the back;

[0030] (11), screen printing upper and lower electrodes;

[0031] (12) Co-firing to form metal contact.

[0032] Wherein step (8) when depositing silicon oxynitride film on the back, set NH 3 with SiH 4 The gas flow ratio is 0.7-1.8; NH 3 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a crystalline silicon solar cell preparation technology, in particular to a preparation method of an anti-PID double-sided PERC solar cell, which comprises a back surface treatment process comprising the following steps: S1, depositing an alumina film on the back surface; S2, depositing a silicon oxynitride film on the back surface; S3, depositing a silicon nitride film onthe back surface. The preparation method of the anti-PID double-sided PERC solar cell is low in cost and simple in process.

Description

technical field [0001] The invention relates to a preparation technology of a crystalline silicon solar cell, in particular to a preparation method of an anti-PID double-sided PERC solar cell. Background technique [0002] The PID (Potential Induced Degradation) effect is called the high-voltage induced attenuation effect, which is a kind of attenuation effect of photovoltaic modules under high voltage conditions. With the gradual popularization and application of photovoltaic grid-connected systems, the system voltage is getting higher and higher, and the voltage of the battery inside the module is getting higher and higher relative to the ground, and some even reach 600-1000V. Usually, the aluminum frame of the module is required to be grounded, so A high voltage of 600-1000V is formed between the battery sheet and the aluminum frame. The general photovoltaic module structure is 5 layers, the cell is in the middle of two layers of EVA packaging film, the glass and the bac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1876Y02E10/50Y02P70/50
Inventor 陈筑刘伟俞军徐晓群刘晓巍
Owner NINGBO ULICA SOLAR SCIENCE & TECHNOLOGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap