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A method for low-temperature integration of garnet thin films on silicon based on transfer printing

A garnet and thin-film technology, applied in the field of integrated optics, can solve problems such as high thermal budget and incompatibility with semiconductor processes, and achieve the effect of reducing the degree of corrosion and cracking

Active Publication Date: 2020-03-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above problems or deficiencies, in order to solve the problem of high thermal budget in the preparation of existing garnet films and the incompatibility with semiconductor processes; the present invention provides a method for low-temperature integration of garnet films on silicon based on transfer printing

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  • A method for low-temperature integration of garnet thin films on silicon based on transfer printing
  • A method for low-temperature integration of garnet thin films on silicon based on transfer printing
  • A method for low-temperature integration of garnet thin films on silicon based on transfer printing

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Embodiment

[0025] Step 1: Using chemical self-assembly method on SiO 2 PS spheres with a diameter of 1 μm are arranged in a hexagonal close-packed form on the / Si substrate.

[0026] Step 2: Place the hexagonal close-packed PS pellets in step 1 on a heating plate, heat the PS pellets at 104°C for 20s, and dry the PS pellets; then bombard the pellets in step 2 with oxygen plasma to make the pellets The diameter is reduced to 0.5 μm.

[0027] Step 3: Deposit a YIG film with a thickness of 80 nm at room temperature on the PS pellets finally prepared in Step 2 by pulsed laser deposition (PLD), with a target-base distance of 5.5 cm, a laser frequency of 10 Hz, and an oxygen partial pressure of 0.67 Pa.

[0028] Step 4: Use toluene, alcohol, and deionized water to ultrasonically clean the sample obtained in step 3 in order to remove the PS pellets, and the SiO 2 / Si substrate to obtain hole structure YIG film.

[0029] Step 5: Place the hole-structured YIG film obtained in step 4 in a rapid...

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Abstract

The invention belongs to the field of integrated optics, in particular to a method for low-temperature integration of garnet films on silicon based on transfer printing. In the present invention, using chemical self-assembly method on SiO 2 / Si substrate with hexagonal close-packed PS spheres, and then bombarding the PS spheres with oxygen plasma to reduce the diameter of the spheres, and depositing the magneto-optical garnet film on the PS spheres bombarded by oxygen plasma at room temperature by pulsed laser deposition. On the ball, wash the PS ball with toluene to make the PS ball and the garnet film on it come off, so that the SiO 2 / Si substrate leaves a hole-shaped garnet film, which eventually greatly increases the etching rate and weakens the degree of corrosion of the garnet film by HF. After the etching is complete, the suspended garnet film is removed with a PDMS stamp, and then the garnet film is printed on the silicon substrate, realizing the low-temperature integration of the garnet film on the silicon substrate.

Description

technical field [0001] The invention belongs to the field of integrated optics, in particular to a method for low-temperature integration of garnet films on silicon based on transfer printing. Background technique [0002] Magnetic non-reciprocal optical devices, such as optical isolators, are important devices to realize one-way transmission of light and avoid laser frequency and intensity noise. device. Commercial isolators work based on the Faraday rotation effect of bulk materials. The technology is very mature, but they are bulky and costly, and cannot be compatible with other semiconductor integrated optical devices. Therefore, the research on on-chip integrated magneto-optical isolation devices has become extremely important. Magneto-optical isolators use the nonreciprocity of magneto-optical materials to break the time-reversal symmetry of light propagation, and the properties of magneto-optical materials play a crucial role in the development of on-chip integrated...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/09C23C14/28C23C14/08
CPCC23C14/0005C23C14/08C23C14/28G02F1/093
Inventor 毕磊肖敏王会丽夏爽康同同邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA