A graphene-based plasmonic switch
A plasmon, graphene technology, applied in nanotechnology for materials and surface science, electrical components, sustainable manufacturing/processing, etc., can solve problems such as unexplored real spatial characteristics of limiting plasmon modes , to achieve the effect of long recovery time, enhanced interaction and fast response
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Embodiment 1
[0037]A graphene-based plasmonic switch, the graphene-based plasmonic switch includes a substrate layer 1, a hexagonal boron nitride substrate 3, a graphene nanoribbon 4, gold nanorods 7, a source 5, a drain Pole 6 and graphene gate, the upper surface of substrate layer 1 is provided with hexagonal boron nitride substrate 3, the upper surface of hexagonal boron nitride substrate 3 is provided with graphene nanobelt 4, graphene nanobelt 4 is arranged in a T-shaped structure, and the left side of the graphene nanoribbon 4 is provided with a gold nanorod 7, the front side is provided with a source 5, the rear side is provided with a drain 6, and the front side of the substrate layer 1 is provided with a graphene gate. pole.
[0038] Preferably, the substrate layer 1 is coated with a layer of Al 2 o 3 thin-film silicon substrate, and the thickness of the silicon substrate is 200 μm.
[0039] Preferably, the silicon substrate is SiO 2 base.
[0040] Preferably, the source elec...
Embodiment 2
[0051] A graphene-based plasmonic switch, the graphene-based plasmonic switch includes a substrate layer 1, a hexagonal boron nitride substrate 3, a graphene nanoribbon 4, gold nanorods 7, a source 5, a drain Pole 6 and graphene gate, the upper surface of substrate layer 1 is provided with hexagonal boron nitride substrate 3, the upper surface of hexagonal boron nitride substrate 3 is provided with graphene nanobelt 4, graphene nanobelt 4 is arranged in a T-shaped structure, and the left side of the graphene nanoribbon 4 is provided with a gold nanorod 7, the front side is provided with a source 5, the rear side is provided with a drain 6, and the front side of the substrate layer 1 is provided with a graphene gate. pole.
[0052] Preferably, the substrate layer 1 is coated with a layer of Al 2 o 3 thin-film silicon substrate, and the thickness of the silicon substrate is 300 μm.
[0053] Preferably, the silicon substrate is SiO 2 base.
[0054] Preferably, the source ele...
Embodiment 3
[0065] A graphene-based plasmonic switch, the graphene-based plasmonic switch includes a substrate layer 1, a hexagonal boron nitride substrate 3, a graphene nanoribbon 4, gold nanorods 7, a source 5, a drain Pole 6 and graphene gate, the upper surface of substrate layer 1 is provided with hexagonal boron nitride substrate 3, the upper surface of hexagonal boron nitride substrate 3 is provided with graphene nanobelt 4, graphene nanobelt 4 is arranged in a T-shaped structure, and the left side of the graphene nanoribbon 4 is provided with a gold nanorod 7, the front side is provided with a source 5, the rear side is provided with a drain 6, and the front side of the substrate layer 1 is provided with a graphene gate. pole.
[0066] Preferably, the substrate layer 1 is coated with a layer of Al 2 o 3 thin film silicon substrate, and the thickness of the silicon substrate is 400nm.
[0067] Preferably, the silicon substrate is SiO 2 base.
[0068] Preferably, the source elec...
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