A light emit diode epitaxial wafer and a preparation method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of semiconductor technology. The LED epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a stress relief layer, an active layer and a P-type semiconductor layer, wherein the buffer layer, the N-type semiconductor layer, the stress relief layer, the active layer and the P-type semiconductor layer are laminated on the substrate in sequence; the stress relief layer comprises a plurality of first sub-layers and a plurality of second sub-layers, wherein the plurality of first sub-layers and the plurality of second sub-layers are alternately stacked; the material of the first sub-layer is zinc oxide doped with aluminum element, and the materialof the second sub-layer is gallium nitride doped with indium element. The invention can achieve good stress release effect, effectively prevent the stress and defects generated by lattice mismatch between sapphire and gallium nitride from extending to the active layer, is conducive to the radiation recombination luminescence of electrons and holes in the active layer, and improves the luminescence efficiency of the light emitting diode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor light emitting device made by using the principle of semiconductor PN junction electroluminescence. The epitaxial wafer is the primary product in the process of manufacturing light-emitting diodes. [0003] An existing epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The P-type semiconductor layer is used to provide holes for recombination light emission, the N-type semiconductor layer is used to provide electrons for recombination light emission, t...

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Problems solved by technology

[0007] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the stress and defects caused by the lattice mismatch between sapphire and gallium nitride in the prior art and affect the radiative recombination of electrons and holes in the active layer Luminescence, causing the problem of low luminous efficiency of LED

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