Metal film layer deposition method and device

Abstract

The invention provides a metal film layer deposition method and device. The method is characterized in that a metal film layer is deposited on an epitaxial layer on the surface of a substrate by a magneto-sputtering deposition method. The method comprises the steps of loading radio-frequency power to a target material within a preset time; depositing a metal buffering layer on the epitaxial layer;and loading DC power to the target material until the metal film layer is deposited in preset thickness on the epitaxial layer. According to the metal film layer deposition method, the radio-frequency power is loaded to the target material within the preset time while starting deposition, and the negative bias on the target material can be obviously reduced under the same input power; and as thevoltage of the target material decreases, the damage of sputtered particles to the epitaxial layer on the surface of the substrate in the metal film layer deposition process is reduced. Therefore, good ohmic contact is realized between the epitaxial layer and the metal film layer, and as a result, the yield of an LED chip is increased; the DC power is loaded to the target material in subsequent steps, thus the deposition rate of the metal film layer can be increased, and as a result, the productivity of the LED chip is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a metal film deposition method and metal film deposition equipment. Background technique [0002] The LED chip flip-chip process has obvious advantages over the traditional front-mount process in terms of chip brightness, light output efficiency, heat dissipation performance and reliability. Gaining importance. Compared with the traditional process, the application of the metal film layer in the flip chip process is more and more extensive, the types of metals involved are increased, and the ratio of the metal film area to the total chip area is also increased. Therefore, the role of the metal film in the flip-chip process is very important, and as an important means of metal film preparation, the magnetron sputtering physical deposition method has become an indispensable method for the preparation of the metal film layer in the LED flip-chip process. [0003] ...

AI Technical Summary

Problems solved by technology

[0005] However, because the metal film layer is in direct contact with the GaN epitaxial layer in the LED flip-chip process, when the power of the sputtering source is high, the energy of the emitted particles is relatively large, which will inevitably cause damage to the structure of the GaN surface layer during deposition.

Once the damage is formed, it will first affect the quantum efficiency of the active layer, and then lead to the deterioration of the ohmic contact effect between the epitaxial layer and the metal film layer. The final result is the deterioration of the electrical and optical properties of the LED chip, and the yield rate is not high. defect

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