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A method for manufacturing a pyroelectric infrared detector sensing unit

A pyroelectric infrared, sensitive unit technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as difficulty in preparing high-performance pyroelectric infrared detectors, weak absorption layer adhesion, and narrow absorption band. , to achieve the effect of excellent heat transfer performance, small specific heat capacity and wide absorption band

Inactive Publication Date: 2019-01-15
游代华
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the absorption layer of pyroelectric infrared detectors has disadvantages such as weak adhesion or narrow absorption band, incompatibility with standard semiconductor processes, and difficulty in preparing high-performance pyroelectric infrared detectors.

Method used

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  • A method for manufacturing a pyroelectric infrared detector sensing unit
  • A method for manufacturing a pyroelectric infrared detector sensing unit

Examples

Experimental program
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Effect test

example 1

[0043] (1) Lithium tantalate (LiTaO3) crystal surface treatment

[0044] 1) Clean the LiTaO3 wafer. Carry out mechanical thinning polishing and chemical etching to LiTaO3 wafer A surface (first surface) and B surface (second surface). Wet etching of LiTaO3 wafers to remove defects and damage from thinning and polishing.

[0045] (2) Deposit the infrared absorbing layer and etch to form the electrode structure

[0046] 2) Clean the LiTaO3 wafer, and pattern it by photolithography on the A side (that is, form the pattern described above).

[0047] 3) Depositing a chromium metal film and a nickel metal film on the A side of the LiTaO3 wafer by magnetron sputtering. Float cleaning. Among them, the thickness of the chromium metal film is 15nm, and the thickness of the nickel metal film is 60nm.

[0048] 4) Photolithographic patterning on the A side of the LiTaO3 wafer.

[0049] 5) Deposit a chromium-nickel alloy absorbing layer on the A side of the LiTaO3 wafer by magnetron s...

example 2

[0056] (1) LiTaO3 surface treatment

[0057] 1) Clean the LiTaO3 wafer. Carry out mechanical thinning polishing and chemical etching to LiTaO3 wafer A surface (first surface) and B surface (second surface). Wet etching of LiTaO3 wafers to remove defects and damage from thinning and polishing.

[0058] (2) Deposit the infrared absorbing layer and etch to form the electrode structure

[0059] 2) Clean the LiTaO3 wafer, and pattern it by photolithography on the A side.

[0060] 3) On the A side of the LiTaO3 wafer, a magnetron sputtering process is used to deposit a chromium metal film and a nickel metal film, and the floating glue is cleaned. Among them, the thickness of the chromium metal film is 20nm, and the thickness of the nickel metal film is 65nm.

[0061] 4) Photolithographic patterning on the A side of the LiTaO3 wafer.

[0062] 5) Deposit a chromium-nickel alloy absorbing layer on the A side of the LiTaO3 wafer by thermal evaporation. The sheet resistance of the c...

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Abstract

The invention discloses a method for manufacturing a pyroelectric infrared detector sensing unit, comprising the steps of: preparing a lithium tantalate wafer substrate; Forming a chromium metal filmon the first surface of the lithium tantalate wafer substrate; Forming a nickel metal film on the chromium metal film; Forming a first chromium-nickel alloy layer on the nickel metal film and etchingto form an upper electrode; A second chromium-nickel alloy layer is formed on the second surface of the lithium tantalate wafer substrate and etched to form a lower electrode. The absorption layer ofthe pyroelectric infrared detector sensing unit manufactured according to the method of the embodiment of the present invention has the advantages of firm adhesion, good repeatability, wide absorptionband, flat spectrum, high absorption rate, small specific heat capacity and excellent heat transfer performance. At the same time, the absorbing layer can also be used as the electrode, which is suitable for the pyroelectric infrared detector.

Description

technical field [0001] The invention belongs to the technical field of pyroelectric infrared detectors, in particular to a method for manufacturing a sensitive unit of a pyroelectric infrared detector. Background technique [0002] Pyroelectric infrared detectors have many advantages such as room temperature operation, low power consumption, compact structure, high reliability, wide and flat spectral response, simple process, low price, and strong anti-interference, and can be widely used in military defense, industrial , medicine and health, environmental monitoring and scientific research and other fields, such as infrared guidance and intrusion alarm, safety monitoring, fire alarm, industrial production monitoring, aircraft volume assisted driving, medical diagnosis, spectral analysis, earth atmosphere monitoring and many other aspects. [0003] When the infrared radiation is incident on the pyroelectric infrared detector, the infrared radiation is absorbed by the detecto...

Claims

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Application Information

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IPC IPC(8): H01L31/09
CPCH01L31/09
Inventor 游代华
Owner 游代华
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