A kind of low dielectric polyimide composite film and preparation method thereof

A polyimide, composite film technology, applied in chemical instruments and methods, synthetic resin layered products, coatings, etc., can solve problems affecting the uniformity of film properties, FPC heat resistance, unsatisfactory electrical properties, thick thickness And other issues

Active Publication Date: 2021-06-15
株洲时代华昇新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, high integration makes the thickness control of FPC more stringent. Traditional electronic grade polyimide film (PI film) usually uses acrylic and epoxy adhesives. In order to ensure adhesion, its thickness is generally thicker. , and the heat resistance and electrical performance of FPC using traditional adhesives cannot meet the requirements of the "5G" era
The calcium carbonate powder and reinforcing filler used in this method will inevitably encounter problems such as sedimentation and agglomeration, and it is difficult to distribute evenly in the resin system, which will affect the uniformity of film performance
In addition, this low-dielectric PI film is also a thermoset material and does not have adhesive properties

Method used

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  • A kind of low dielectric polyimide composite film and preparation method thereof
  • A kind of low dielectric polyimide composite film and preparation method thereof
  • A kind of low dielectric polyimide composite film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as figure 1 As shown, a double-layer low-dielectric polyimide composite film, including a thermosetting polyimide layer, a thermoplastic polyimide adhesive layer and cage polysilsesquioxane (POSS), thermoplastic polyimide The adhesive layer is bonded to one side of the thermosetting polyimide layer, and the cage polysilsesquioxane is dispersed in the thermosetting polyimide layer. Wherein, the thickness of the thermosetting polyimide layer is 25 μm, and the thickness of the thermoplastic polyimide adhesive layer is 3 μm.

[0037] In the above-mentioned double-layer low-dielectric polyimide composite film, POSS is selected from the aforementioned structural formula (IV).

[0038] The preparation method of the above-mentioned double-layer low-dielectric polyimide composite film comprises the following steps:

[0039] (1) Preparation of precursor resin a: first dissolve 40.0kg of 4,4'-diaminodiphenyl ether, 2.1kg of p-phenylenediamine and 23.0kg of POSS (Ⅳ) in 468.8...

Embodiment 2

[0043] A double-layer low-dielectric polyimide composite film, comprising a thermosetting polyimide layer, a thermoplastic polyimide adhesive layer and cage polysilsesquioxane (POSS), a thermoplastic polyimide adhesive layer bonded Bonded to one side of the thermosetting polyimide layer, the cage polysilsesquioxane is dispersed in the thermosetting polyimide layer and the thermoplastic polyimide adhesive layer. Wherein, the thickness of the thermosetting polyimide layer is 25 μm, and the thickness of the thermoplastic polyimide adhesive layer is 5 μm.

[0044] In the above-mentioned double-layer low-dielectric polyimide composite film, the POSS is selected from the aforementioned structural formulas (II) and (IV).

[0045] The preparation method of the above-mentioned double-layer low-dielectric polyimide composite film comprises the following steps:

[0046] (1) Preparation of precursor resin a: first dissolve 43.2kg of 4,4'-diaminodiphenyl ether, 2.1kg of p-phenylenediamine...

Embodiment 3

[0050] A double-layer low-dielectric polyimide composite film, comprising a thermosetting polyimide layer, a thermoplastic polyimide adhesive layer and cage polysilsesquioxane (POSS), a thermoplastic polyimide adhesive layer bonded Bonded to one side of the thermosetting polyimide layer, the cage polysilsesquioxane is dispersed in the thermosetting polyimide layer and the thermoplastic polyimide adhesive layer. Wherein, the thickness of the thermosetting polyimide layer is 25 μm, and the thickness of the thermoplastic polyimide adhesive layer is 6 μm.

[0051] In the above-mentioned double-layer low-dielectric polyimide composite film, the POSS is selected from the aforementioned structural formulas (III) and (V).

[0052] The preparation method of the above-mentioned double-layer low-dielectric polyimide composite film comprises the following steps:

[0053] (1) Preparation of precursor resin a: first dissolve 45.6kg of 4,4'-diaminodiphenylmethane, 2.2kg of p-phenylenediamin...

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Abstract

The invention discloses a low-dielectric polyimide composite film, comprising a thermosetting polyimide layer and a thermoplastic polyimide adhesive layer, and the thermoplastic polyimide adhesive layer covers the thermosetting polyimide layer At least one side of said thermosetting polyimide layer and / or thermoplastic polyimide adhesive layer contains cage polysilsesquioxane. The present invention also correspondingly provides a method for preparing the above-mentioned low-dielectric polyimide composite film. In the present invention, cage-type polysilsesquioxane is introduced into the thermosetting polyimide layer and the thermoplastic polyimide adhesive layer, and after being dispersed in the polyimide, molecular-scale holes are introduced into the polyimide, It can effectively reduce the dielectric constant of polyimide film. In addition, the present invention uses a thermoplastic polyimide adhesive layer instead of a traditional adhesive layer, which can reduce the thickness of the film layer while ensuring excellent bonding performance.

Description

technical field [0001] The invention belongs to the field of polymer materials, and in particular relates to a polyimide composite film and a preparation method thereof. Background technique [0002] With the rapid development of microelectronics technology, especially the upgrading of communication technology from "4G" to "5G", the integration level of chips in integrated circuits has increased rapidly, and many requirements have been put forward for the insulating film materials between metal layers: first, metal interconnection The resistance-capacitance (RC) delay increases approximately quadratically, which leads to many problems such as signal transmission delay and crosstalk. In order to reduce delay time, reduce signal interference, and meet the requirements of high integration of integrated circuits, reducing the dielectric constant of PI film is The best practices recognized in the industry. Second, high integration makes the thickness control of FPC more stringen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B27/28B32B27/06C08G73/10C08J5/18C08L79/08C08L83/04B29C41/32B29C48/00B29C48/18B29C69/02
CPCB29C41/32B29C69/02B32B27/08B32B27/281B32B2307/20B32B2307/734C08G73/1042C08G73/1071C08J5/18C08J2379/08C08J2483/04
Inventor 廖波杨军张步峰温友张文祥
Owner 株洲时代华昇新材料技术有限公司
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